Measurement of the static and dynamic linewidth enhancement factor in strained 1.55μm InGaAsP lasers

H. D. Summers; I. H. White

doi:10.1049/el:19940761

Measurement of the static and dynamic linewidth enhancement factor in strained 1.55μm InGaAsP lasers

H. D. Summers, I. H. White

University of Bath

Research output: Contribution to journal › Article › peer-review

Abstract

The linewidth enhancement factor, α, has been measured in unstrained and 1% compressively strained InGaAsP lasers operating under both static and dynamic conditions. Values of 4 ± 0.5 for the unstrained lasers and 2.1 ± 0.5 for the strained devices are found under DC conditions. The α-value for the strained lasers measured under dynamic conditions is 2.4 ± 0.6.

Original language	English
Pages (from-to)	1140-1141
Number of pages	2
Journal	Electronics Letters
Volume	30
Issue number	14
DOIs	https://doi.org/10.1049/el:19940761
Publication status	Published - 7 Jul 1994

Keywords

Laser linewidth
Laser variables measurement
Semiconductor lasers

ASJC Scopus subject areas

Electrical and Electronic Engineering

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10.1049/el:19940761

Cite this

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title = "Measurement of the static and dynamic linewidth enhancement factor in strained 1.55μm InGaAsP lasers",

abstract = "The linewidth enhancement factor, α, has been measured in unstrained and 1\% compressively strained InGaAsP lasers operating under both static and dynamic conditions. Values of 4 ± 0.5 for the unstrained lasers and 2.1 ± 0.5 for the strained devices are found under DC conditions. The α-value for the strained lasers measured under dynamic conditions is 2.4 ± 0.6.",

keywords = "Laser linewidth, Laser variables measurement, Semiconductor lasers",

author = "Summers, \{H. D.\} and White, \{I. H.\}",

year = "1994",

month = jul,

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doi = "10.1049/el:19940761",

language = "English",

volume = "30",

pages = "1140--1141",

journal = "Electronics Letters",

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AU - Summers, H. D.

AU - White, I. H.

PY - 1994/7/7

Y1 - 1994/7/7

N2 - The linewidth enhancement factor, α, has been measured in unstrained and 1% compressively strained InGaAsP lasers operating under both static and dynamic conditions. Values of 4 ± 0.5 for the unstrained lasers and 2.1 ± 0.5 for the strained devices are found under DC conditions. The α-value for the strained lasers measured under dynamic conditions is 2.4 ± 0.6.

AB - The linewidth enhancement factor, α, has been measured in unstrained and 1% compressively strained InGaAsP lasers operating under both static and dynamic conditions. Values of 4 ± 0.5 for the unstrained lasers and 2.1 ± 0.5 for the strained devices are found under DC conditions. The α-value for the strained lasers measured under dynamic conditions is 2.4 ± 0.6.

KW - Laser linewidth

KW - Laser variables measurement

KW - Semiconductor lasers

UR - https://www.scopus.com/pages/publications/0028767529

U2 - 10.1049/el:19940761

DO - 10.1049/el:19940761

M3 - Article

AN - SCOPUS:0028767529

SN - 0013-5194

VL - 30

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JO - Electronics Letters

JF - Electronics Letters

IS - 14

ER -

Measurement of the static and dynamic linewidth enhancement factor in strained 1.55μm InGaAsP lasers

Abstract

Keywords

ASJC Scopus subject areas

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