Measurement of the static and dynamic linewidth enhancement factor in strained 1.55μm InGaAsP lasers

H. D. Summers, I. H. White

Research output: Contribution to journalArticle

Abstract

The linewidth enhancement factor, α, has been measured in unstrained and 1% compressively strained InGaAsP lasers operating under both static and dynamic conditions. Values of 4 ± 0.5 for the unstrained lasers and 2.1 ± 0.5 for the strained devices are found under DC conditions. The α-value for the strained lasers measured under dynamic conditions is 2.4 ± 0.6.

Original languageEnglish
Pages (from-to)1140-1141
Number of pages2
JournalElectronics Letters
Volume30
Issue number14
DOIs
Publication statusPublished - 7 Jul 1994

Keywords

  • Laser linewidth
  • Laser variables measurement
  • Semiconductor lasers

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

Cite this

Measurement of the static and dynamic linewidth enhancement factor in strained 1.55μm InGaAsP lasers. / Summers, H. D.; White, I. H.

In: Electronics Letters, Vol. 30, No. 14, 07.07.1994, p. 1140-1141.

Research output: Contribution to journalArticle

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