Abstract
The differential gain of an InGaAs/GaAs vertical cavity surface emitting laser (VCSEL) has been obtained through measurement of the subthreshold spectral linewidth. The results are in close agreement with a theoretical model for a VCSEL operating at the peak of the gain spectrum. The linewidth enhancement factor has been measured to be ~0.7at low bias currents again in agreement with theory.
| Original language | English |
|---|---|
| Pages (from-to) | 557-559 |
| Number of pages | 3 |
| Journal | Electronics Letters |
| Volume | 31 |
| Issue number | 7 |
| DOIs | |
| Publication status | Published - 30 Mar 1995 |
Keywords
- Laser linewidth
- Vertical cavity surface emitting lasers
ASJC Scopus subject areas
- Electrical and Electronic Engineering