We describe the growth and investigation of a novel type of structure in which self-organised InAs quantum dots are incorporated in the AlAs tunnelling barrier of an n-i-n single-barrier GaAs/AlAs/GaAs heterostructure. The lowtemperature current-voltage curves exhibit a series of pronounced peaks which are absent in a control sample grown without InAs in the barrier. By studying their behaviour in a magnetic field B, we attribute these peaks to single-electron tunnelling through single discrete zero-dimensional states of individual InAs dots in the barrier.
|Number of pages||5|
|Journal||Journal of Crystal Growth|
|Volume||175 - 176|
|Issue number||Part 2|
|Publication status||Published - 1 May 1997|