MBE growth and magnetotunnelling transport properties of a single GaAs/AlAs/GaAs barrier incorporating InAs quantum dots

M Henini, IE Itskevich, Thomas Ihn, P. Moriarty, Alain Nogaret, PH Beton, L Eaves, pc main, J Middleton, JS Chauhan

Research output: Contribution to journalArticle

Abstract

We describe the growth and investigation of a novel type of structure in which self-organised InAs quantum dots are incorporated in the AlAs tunnelling barrier of an n-i-n single-barrier GaAs/AlAs/GaAs heterostructure. The lowtemperature current-voltage curves exhibit a series of pronounced peaks which are absent in a control sample grown without InAs in the barrier. By studying their behaviour in a magnetic field B, we attribute these peaks to single-electron tunnelling through single discrete zero-dimensional states of individual InAs dots in the barrier.
Original languageEnglish
Pages (from-to)782-786
Number of pages5
JournalJournal of Crystal Growth
Volume175 - 176
Issue numberPart 2
DOIs
Publication statusPublished - 1 May 1997

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    Henini, M., Itskevich, IE., Ihn, T., Moriarty, P., Nogaret, A., Beton, PH., Eaves, L., main, P., Middleton, J., & Chauhan, JS. (1997). MBE growth and magnetotunnelling transport properties of a single GaAs/AlAs/GaAs barrier incorporating InAs quantum dots. Journal of Crystal Growth, 175 - 176(Part 2), 782-786. https://doi.org/10.1016/S0022-0248(96)01035-4