MBE growth and magnetotunnelling transport properties of a single GaAs/AlAs/GaAs barrier incorporating InAs quantum dots

M Henini; IE Itskevich; Thomas Ihn; P. Moriarty; Alain Nogaret; PH Beton; L Eaves; pc main; J Middleton; JS Chauhan

doi:10.1016/S0022-0248(96)01035-4

MBE growth and magnetotunnelling transport properties of a single GaAs/AlAs/GaAs barrier incorporating InAs quantum dots

M Henini, IE Itskevich, Thomas Ihn, P. Moriarty, Alain Nogaret, PH Beton, L Eaves, pc main, J Middleton, JS Chauhan

University of Birmingham

Research output: Contribution to journal › Article › peer-review

Abstract

We describe the growth and investigation of a novel type of structure in which self-organised InAs quantum dots are incorporated in the AlAs tunnelling barrier of an n-i-n single-barrier GaAs/AlAs/GaAs heterostructure. The lowtemperature current-voltage curves exhibit a series of pronounced peaks which are absent in a control sample grown without InAs in the barrier. By studying their behaviour in a magnetic field B, we attribute these peaks to single-electron tunnelling through single discrete zero-dimensional states of individual InAs dots in the barrier.

Original language	English
Pages (from-to)	782-786
Number of pages	5
Journal	Journal of Crystal Growth
Volume	175 - 176
Issue number	Part 2
DOIs	https://doi.org/10.1016/S0022-0248(96)01035-4
Publication status	Published - 1 May 1997

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title = "MBE growth and magnetotunnelling transport properties of a single GaAs/AlAs/GaAs barrier incorporating InAs quantum dots",

abstract = "We describe the growth and investigation of a novel type of structure in which self-organised InAs quantum dots are incorporated in the AlAs tunnelling barrier of an n-i-n single-barrier GaAs/AlAs/GaAs heterostructure. The lowtemperature current-voltage curves exhibit a series of pronounced peaks which are absent in a control sample grown without InAs in the barrier. By studying their behaviour in a magnetic field B, we attribute these peaks to single-electron tunnelling through single discrete zero-dimensional states of individual InAs dots in the barrier.",

author = "M Henini and IE Itskevich and Thomas Ihn and P. Moriarty and Alain Nogaret and PH Beton and L Eaves and pc main and J Middleton and JS Chauhan",

year = "1997",

month = may,

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doi = "10.1016/S0022-0248(96)01035-4",

language = "English",

volume = "175 - 176",

pages = "782--786",

journal = "Journal of Crystal Growth",

issn = "0022-0248",

publisher = "Elsevier B.V.",

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TY - JOUR

T1 - MBE growth and magnetotunnelling transport properties of a single GaAs/AlAs/GaAs barrier incorporating InAs quantum dots

AU - Henini, M

AU - Itskevich, IE

AU - Ihn, Thomas

AU - Moriarty, P.

AU - Nogaret, Alain

AU - Beton, PH

AU - Eaves, L

AU - main, pc

AU - Middleton, J

AU - Chauhan, JS

PY - 1997/5/1

Y1 - 1997/5/1

N2 - We describe the growth and investigation of a novel type of structure in which self-organised InAs quantum dots are incorporated in the AlAs tunnelling barrier of an n-i-n single-barrier GaAs/AlAs/GaAs heterostructure. The lowtemperature current-voltage curves exhibit a series of pronounced peaks which are absent in a control sample grown without InAs in the barrier. By studying their behaviour in a magnetic field B, we attribute these peaks to single-electron tunnelling through single discrete zero-dimensional states of individual InAs dots in the barrier.

AB - We describe the growth and investigation of a novel type of structure in which self-organised InAs quantum dots are incorporated in the AlAs tunnelling barrier of an n-i-n single-barrier GaAs/AlAs/GaAs heterostructure. The lowtemperature current-voltage curves exhibit a series of pronounced peaks which are absent in a control sample grown without InAs in the barrier. By studying their behaviour in a magnetic field B, we attribute these peaks to single-electron tunnelling through single discrete zero-dimensional states of individual InAs dots in the barrier.

U2 - 10.1016/S0022-0248(96)01035-4

DO - 10.1016/S0022-0248(96)01035-4

M3 - Article

SN - 0022-0248

VL - 175 - 176

SP - 782

EP - 786

JO - Journal of Crystal Growth

JF - Journal of Crystal Growth

IS - Part 2

ER -

MBE growth and magnetotunnelling transport properties of a single GaAs/AlAs/GaAs barrier incorporating InAs quantum dots

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