Material gain comparison for InGaAsP, AlGaInAs and InGaAsN for 1.3 micron laser diode

J. C L Yong, J. M. Rorison, R. V. Penty, I. H. White

Research output: Contribution to conferencePaper

5 Citations (Scopus)

Abstract

The material gain and transparency carrier density of semiconducting indium compounds and aluminum compounds were compared at room temperature. The analysis was made to determine the modulation response and threshold carrier density for laser diode applications. Aluminum gallium indium arsenide was found to have the highest peak differential gain and lowest carrier density.

Original languageEnglish
Pages479-480
Number of pages2
Publication statusPublished - 8 Oct 2001
EventConference on Lasers and Electro-Optics (CLEO) - Baltimore, MD, USA United States
Duration: 6 May 200111 May 2001

Conference

ConferenceConference on Lasers and Electro-Optics (CLEO)
CountryUSA United States
CityBaltimore, MD
Period6/05/0111/05/01

ASJC Scopus subject areas

  • Control and Systems Engineering
  • Electrical and Electronic Engineering

Cite this

Yong, J. C. L., Rorison, J. M., Penty, R. V., & White, I. H. (2001). Material gain comparison for InGaAsP, AlGaInAs and InGaAsN for 1.3 micron laser diode. 479-480. Paper presented at Conference on Lasers and Electro-Optics (CLEO), Baltimore, MD, USA United States.

Material gain comparison for InGaAsP, AlGaInAs and InGaAsN for 1.3 micron laser diode. / Yong, J. C L; Rorison, J. M.; Penty, R. V.; White, I. H.

2001. 479-480 Paper presented at Conference on Lasers and Electro-Optics (CLEO), Baltimore, MD, USA United States.

Research output: Contribution to conferencePaper

Yong, JCL, Rorison, JM, Penty, RV & White, IH 2001, 'Material gain comparison for InGaAsP, AlGaInAs and InGaAsN for 1.3 micron laser diode' Paper presented at Conference on Lasers and Electro-Optics (CLEO), Baltimore, MD, USA United States, 6/05/01 - 11/05/01, pp. 479-480.
Yong JCL, Rorison JM, Penty RV, White IH. Material gain comparison for InGaAsP, AlGaInAs and InGaAsN for 1.3 micron laser diode. 2001. Paper presented at Conference on Lasers and Electro-Optics (CLEO), Baltimore, MD, USA United States.
Yong, J. C L ; Rorison, J. M. ; Penty, R. V. ; White, I. H. / Material gain comparison for InGaAsP, AlGaInAs and InGaAsN for 1.3 micron laser diode. Paper presented at Conference on Lasers and Electro-Optics (CLEO), Baltimore, MD, USA United States.2 p.
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