Abstract
The material gain and transparency carrier density of semiconducting indium compounds and aluminum compounds were compared at room temperature. The analysis was made to determine the modulation response and threshold carrier density for laser diode applications. Aluminum gallium indium arsenide was found to have the highest peak differential gain and lowest carrier density.
| Original language | English |
|---|---|
| Pages | 479-480 |
| Number of pages | 2 |
| Publication status | Published - 8 Oct 2001 |
| Event | Conference on Lasers and Electro-Optics (CLEO) - Baltimore, MD, USA United States Duration: 6 May 2001 → 11 May 2001 |
Conference
| Conference | Conference on Lasers and Electro-Optics (CLEO) |
|---|---|
| Country/Territory | USA United States |
| City | Baltimore, MD |
| Period | 6/05/01 → 11/05/01 |
ASJC Scopus subject areas
- Control and Systems Engineering
- Electrical and Electronic Engineering