Material gain comparison for InGaAsP, AlGaInAs and InGaAsN for 1.3 micron laser diode

J. C L Yong; J. M. Rorison; R. V. Penty; I. H. White

Material gain comparison for InGaAsP, AlGaInAs and InGaAsN for 1.3 micron laser diode

J. C L Yong, J. M. Rorison, R. V. Penty, I. H. White

Vice Chancellor's Office

Research output: Contribution to conference › Paper › peer-review

7 Citations (SciVal)

Abstract

The material gain and transparency carrier density of semiconducting indium compounds and aluminum compounds were compared at room temperature. The analysis was made to determine the modulation response and threshold carrier density for laser diode applications. Aluminum gallium indium arsenide was found to have the highest peak differential gain and lowest carrier density.

Original language	English
Pages	479-480
Number of pages	2
Publication status	Published - 8 Oct 2001
Event	Conference on Lasers and Electro-Optics (CLEO) - Baltimore, MD, USA United States Duration: 6 May 2001 → 11 May 2001

Conference

Conference	Conference on Lasers and Electro-Optics (CLEO)
Country/Territory	USA United States
City	Baltimore, MD
Period	6/05/01 → 11/05/01

ASJC Scopus subject areas

Control and Systems Engineering
Electrical and Electronic Engineering

Cite this

@conference{143a2a48eb294bdf99a807ebf8efc59c,

title = "Material gain comparison for InGaAsP, AlGaInAs and InGaAsN for 1.3 micron laser diode",

abstract = "The material gain and transparency carrier density of semiconducting indium compounds and aluminum compounds were compared at room temperature. The analysis was made to determine the modulation response and threshold carrier density for laser diode applications. Aluminum gallium indium arsenide was found to have the highest peak differential gain and lowest carrier density.",

author = "Yong, {J. C L} and Rorison, {J. M.} and Penty, {R. V.} and White, {I. H.}",

year = "2001",

month = oct,

day = "8",

language = "English",

pages = "479--480",

note = "Conference on Lasers and Electro-Optics (CLEO) ; Conference date: 06-05-2001 Through 11-05-2001",

}

TY - CONF

T1 - Material gain comparison for InGaAsP, AlGaInAs and InGaAsN for 1.3 micron laser diode

AU - Yong, J. C L

AU - Rorison, J. M.

AU - Penty, R. V.

AU - White, I. H.

PY - 2001/10/8

Y1 - 2001/10/8

N2 - The material gain and transparency carrier density of semiconducting indium compounds and aluminum compounds were compared at room temperature. The analysis was made to determine the modulation response and threshold carrier density for laser diode applications. Aluminum gallium indium arsenide was found to have the highest peak differential gain and lowest carrier density.

AB - The material gain and transparency carrier density of semiconducting indium compounds and aluminum compounds were compared at room temperature. The analysis was made to determine the modulation response and threshold carrier density for laser diode applications. Aluminum gallium indium arsenide was found to have the highest peak differential gain and lowest carrier density.

UR - http://www.scopus.com/inward/record.url?scp=0034805240&partnerID=8YFLogxK

M3 - Paper

AN - SCOPUS:0034805240

SP - 479

EP - 480

T2 - Conference on Lasers and Electro-Optics (CLEO)

Y2 - 6 May 2001 through 11 May 2001

ER -

Material gain comparison for InGaAsP, AlGaInAs and InGaAsN for 1.3 micron laser diode

Abstract

Conference

ASJC Scopus subject areas

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