Magnetoresistance of Electrons Channelled by Microscopic Magnetic Field Modulation

B Dai, X X Liu, Y Lei, Alain Nogaret

Research output: Contribution to journalArticlepeer-review

7 Citations (SciVal)


We report the magnetoresistance of two-dimensional electron gas, which is made of GaAs based epitaxial multilayers and laterally subjected to a periodic magnetic field. The modulation field is produced by an array of submicrometre ferromagnets fabricated at the surface of the heterostructure. The magnetoresistance of about 20% is found at low temperature 80 K. The measurement is in quantitative agreement with semiclassical simulations, which reveal that the magnetoresistance is due to electrons trapped in snake orbits along lines of zero magnetic field.
Original languageEnglish
Article number037202
JournalChinese Physics Letters
Issue number3
Publication statusPublished - Mar 2009


Dive into the research topics of 'Magnetoresistance of Electrons Channelled by Microscopic Magnetic Field Modulation'. Together they form a unique fingerprint.

Cite this