Abstract
We have used interband magneto-reflectivity to study the band parameters of wurtzite GaN epilayers grown on sapphire. Using magnetic fields up to 57 T, we have observed a series of up to ten magneto-excitonic transitions for the first time. The levels can be fitted with two intersecting magneto-excitonic fans coming from the A and B valence band edges with reduced masses of (0.195 ± 0.01) m0 and (0.180 ± 0.003) m0 respectively. The field dependence of the A-exciton 1s and 2p states gives a reduced mass of (0.180 ± 0.005) m0, and (0.193 ± 0.005) m0 is found with the B-exciton 1s state. The B exciton shows a clear spin splitting at 57 T, whereas no splitting of the A exciton is observed.
Original language | English |
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Pages (from-to) | 17-20 |
Number of pages | 4 |
Journal | Physica Status Solidi (B) |
Volume | 216 |
Issue number | 1 |
Publication status | Published - 1999 |