Magnetic resonance and the structure of magnesium acceptors in gallium nitride

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Abstract

In recent years there have been several theoretical and experimental investigations concerned with the detailed structure of the acceptor states in Mg-doped GaN. Thus, the shallow effective-mass-like acceptor has been attributed to simple substitutional Mg at Ga sites in unstrained regions of the material, while earlier suggestions that the Mg is associated with H appear to have been discounted by more recent studies. Deeper acceptor states have also been attributed to simple substitutional Mg, but in strained regions. The present paper makes use of the extensive data available from electron spin resonance and optically detected magnetic resonance to confirm these assignments and to highlight further the crucial role played by strain in influencing the detailed nature of the acceptor states. In particular, the neutral deep acceptor states are found to be formed by localization of the holes in p-like orbits on N atoms that lie in the basal plane, rather than along the c axis, relative to the Mg dopant.
Original languageEnglish
Article number235208
Number of pages5
JournalPhysical Review B
Volume87
Issue number23
DOIs
Publication statusPublished - 15 Jun 2013

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Gallium nitride
gallium nitrides
Magnetic resonance
Magnesium
suggestion
Paramagnetic resonance
magnetic resonance
magnesium
electron paramagnetic resonance
Orbits
Doping (additives)
orbits
Atoms
atoms
gallium nitride

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Magnetic resonance and the structure of magnesium acceptors in gallium nitride. / Davies, J.J.

In: Physical Review B, Vol. 87, No. 23, 235208, 15.06.2013.

Research output: Contribution to journalArticle

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