Magnetic field dependence of terahertz emission from an optically excited GaAs p-i-n diode

S R Andrews, A Armitage, P G Huggard, C J Shaw, G P Moore, R Grey

Research output: Contribution to journalArticle

5 Citations (Scopus)
Original languageEnglish
JournalPhysical Review B
Volume66
Issue number8
Publication statusPublished - 2002

Cite this

Andrews, S. R., Armitage, A., Huggard, P. G., Shaw, C. J., Moore, G. P., & Grey, R. (2002). Magnetic field dependence of terahertz emission from an optically excited GaAs p-i-n diode. Physical Review B, 66(8).

Magnetic field dependence of terahertz emission from an optically excited GaAs p-i-n diode. / Andrews, S R; Armitage, A; Huggard, P G; Shaw, C J; Moore, G P; Grey, R.

In: Physical Review B, Vol. 66, No. 8, 2002.

Research output: Contribution to journalArticle

Andrews, SR, Armitage, A, Huggard, PG, Shaw, CJ, Moore, GP & Grey, R 2002, 'Magnetic field dependence of terahertz emission from an optically excited GaAs p-i-n diode', Physical Review B, vol. 66, no. 8.
Andrews, S R ; Armitage, A ; Huggard, P G ; Shaw, C J ; Moore, G P ; Grey, R. / Magnetic field dependence of terahertz emission from an optically excited GaAs p-i-n diode. In: Physical Review B. 2002 ; Vol. 66, No. 8.
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AU - Shaw, C J

AU - Moore, G P

AU - Grey, R

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JO - Physical Review B : Condensed Matter and Materials Physics

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