Luminescence properties of two-photon excited silicon nanocrystals

J Diener, D Kovalev, G Polisski, F Koch

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3 Citations (Scopus)

Abstract

Visible photoluminescence (PL) from silicon nanocrystals (NCs) in porous silicon (PSi) at two-photon excitation (two-photon absorption) has been studied. For resonant excitation at low temperatures the PL response near to the excitation energy differs significantly from that observed at one-photon excitation. Contrary to one-photon excitation no spectral gap between the excitation energy and the onset of the two-photos excited PL is observed. This is explained in the framework of selection rules for dipole allowed and forbidden optical transitions in silicon NCs. At room temperature one- and two-photon excitation results in a similar PL spectra. However; the degree of linear polarization (p) is significantly larger for the later one. This enhancement of p is a consequence of the dielectric nanostructure of PSi and the excitation of ellipsoidal NCs with linearly polarized light by a higher-order, nonlinear, process. (C) 2001 Elsevier Science B.V. All rights reserved.
Original languageEnglish
Pages (from-to)117-120
Number of pages4
JournalOptical Materials
Volume17 Jun-Jul
Issue number1-2
Publication statusPublished - 2001

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    Diener, J., Kovalev, D., Polisski, G., & Koch, F. (2001). Luminescence properties of two-photon excited silicon nanocrystals. Optical Materials, 17 Jun-Jul(1-2), 117-120.