Luminescence properties of two-photon excited silicon nanocrystals

J Diener, D Kovalev, G Polisski, F Koch

Research output: Contribution to journalArticle

3 Citations (Scopus)

Abstract

Visible photoluminescence (PL) from silicon nanocrystals (NCs) in porous silicon (PSi) at two-photon excitation (two-photon absorption) has been studied. For resonant excitation at low temperatures the PL response near to the excitation energy differs significantly from that observed at one-photon excitation. Contrary to one-photon excitation no spectral gap between the excitation energy and the onset of the two-photos excited PL is observed. This is explained in the framework of selection rules for dipole allowed and forbidden optical transitions in silicon NCs. At room temperature one- and two-photon excitation results in a similar PL spectra. However; the degree of linear polarization (p) is significantly larger for the later one. This enhancement of p is a consequence of the dielectric nanostructure of PSi and the excitation of ellipsoidal NCs with linearly polarized light by a higher-order, nonlinear, process. (C) 2001 Elsevier Science B.V. All rights reserved.
Original languageEnglish
Pages (from-to)117-120
Number of pages4
JournalOptical Materials
Volume17 Jun-Jul
Issue number1-2
Publication statusPublished - 2001

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Silicon
Nanocrystals
Luminescence
nanocrystals
Photons
luminescence
Photoluminescence
photons
silicon
excitation
Excitation energy
Porous silicon
photoluminescence
porous silicon
Optical transitions
Light polarization
Nanostructures
linear polarization
optical transition
Polarization

Cite this

Diener, J., Kovalev, D., Polisski, G., & Koch, F. (2001). Luminescence properties of two-photon excited silicon nanocrystals. Optical Materials, 17 Jun-Jul(1-2), 117-120.

Luminescence properties of two-photon excited silicon nanocrystals. / Diener, J; Kovalev, D; Polisski, G; Koch, F.

In: Optical Materials, Vol. 17 Jun-Jul, No. 1-2, 2001, p. 117-120.

Research output: Contribution to journalArticle

Diener, J, Kovalev, D, Polisski, G & Koch, F 2001, 'Luminescence properties of two-photon excited silicon nanocrystals', Optical Materials, vol. 17 Jun-Jul, no. 1-2, pp. 117-120.
Diener J, Kovalev D, Polisski G, Koch F. Luminescence properties of two-photon excited silicon nanocrystals. Optical Materials. 2001;17 Jun-Jul(1-2):117-120.
Diener, J ; Kovalev, D ; Polisski, G ; Koch, F. / Luminescence properties of two-photon excited silicon nanocrystals. In: Optical Materials. 2001 ; Vol. 17 Jun-Jul, No. 1-2. pp. 117-120.
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AB - Visible photoluminescence (PL) from silicon nanocrystals (NCs) in porous silicon (PSi) at two-photon excitation (two-photon absorption) has been studied. For resonant excitation at low temperatures the PL response near to the excitation energy differs significantly from that observed at one-photon excitation. Contrary to one-photon excitation no spectral gap between the excitation energy and the onset of the two-photos excited PL is observed. This is explained in the framework of selection rules for dipole allowed and forbidden optical transitions in silicon NCs. At room temperature one- and two-photon excitation results in a similar PL spectra. However; the degree of linear polarization (p) is significantly larger for the later one. This enhancement of p is a consequence of the dielectric nanostructure of PSi and the excitation of ellipsoidal NCs with linearly polarized light by a higher-order, nonlinear, process. (C) 2001 Elsevier Science B.V. All rights reserved.

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