Low voltage extrinsic switching of ferroelectric δ-PVDF ultra-thin films

Mengyuan Li, Ilias Katsouras, Kamal Asadi, Paul W.M. Blom, Dago M. De Leeuw

Research output: Contribution to journalArticle

24 Citations (Scopus)

Abstract

Non-volatile memories operating at low voltage are indispensable for flexible micro-electronic applications. To that end, ferroelectric δ-PVDF films were investigated as a function of layer thickness down to 10 nm ultra-thin films. Capacitors were fabricated using PEDOT:PSS as non-reactive electrode. Full polarization reversal was obtained at an unprecedented voltage below 5 V. The remanent polarization of 7 μC/cm2 and coercive field of 120 MV/m are independent of layer thickness, demonstrating that ferroelectric switching in δ-PVDF is extrinsic, dominated by inhomogeneous nucleation and growth. The ease of processing of δ-PVDF allowed to determine a lower limit of the critical ferroelectric thickness.

Original languageEnglish
Article number072903
JournalApplied Physics Letters
Volume103
Issue number7
DOIs
Publication statusPublished - 12 Aug 2013

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Fingerprint Dive into the research topics of 'Low voltage extrinsic switching of ferroelectric δ-PVDF ultra-thin films'. Together they form a unique fingerprint.

Cite this