Low voltage extrinsic switching of ferroelectric δ-PVDF ultra-thin films

Mengyuan Li; Ilias Katsouras; Kamal Asadi; Paul W.M. Blom; Dago M. De Leeuw

doi:10.1063/1.4818626

Low voltage extrinsic switching of ferroelectric δ-PVDF ultra-thin films

Mengyuan Li, Ilias Katsouras, Kamal Asadi, Paul W.M. Blom, Dago M. De Leeuw

Department of Physics

Research output: Contribution to journal › Article › peer-review

34 Citations (SciVal)

Abstract

Non-volatile memories operating at low voltage are indispensable for flexible micro-electronic applications. To that end, ferroelectric δ-PVDF films were investigated as a function of layer thickness down to 10 nm ultra-thin films. Capacitors were fabricated using PEDOT:PSS as non-reactive electrode. Full polarization reversal was obtained at an unprecedented voltage below 5 V. The remanent polarization of 7 μC/cm² and coercive field of 120 MV/m are independent of layer thickness, demonstrating that ferroelectric switching in δ-PVDF is extrinsic, dominated by inhomogeneous nucleation and growth. The ease of processing of δ-PVDF allowed to determine a lower limit of the critical ferroelectric thickness.

Original language	English
Article number	072903
Journal	Applied Physics Letters
Volume	103
Issue number	7
DOIs	https://doi.org/10.1063/1.4818626
Publication status	Published - 12 Aug 2013

Funding

We would like to acknowledge Frank Keller (Max Planck Institute for Polymer Research) for AFM measurements and Natalie Stingelin (Imperial College, London) for fruitful discussions. We acknowledge financial support by Zernike Institute for Advanced Materials and by the EC Program (FP7/2007-2013) under grant Agreement No. 248092 of the MOMA Project.

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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abstract = "Non-volatile memories operating at low voltage are indispensable for flexible micro-electronic applications. To that end, ferroelectric δ-PVDF films were investigated as a function of layer thickness down to 10 nm ultra-thin films. Capacitors were fabricated using PEDOT:PSS as non-reactive electrode. Full polarization reversal was obtained at an unprecedented voltage below 5 V. The remanent polarization of 7 μC/cm2 and coercive field of 120 MV/m are independent of layer thickness, demonstrating that ferroelectric switching in δ-PVDF is extrinsic, dominated by inhomogeneous nucleation and growth. The ease of processing of δ-PVDF allowed to determine a lower limit of the critical ferroelectric thickness.",

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AB - Non-volatile memories operating at low voltage are indispensable for flexible micro-electronic applications. To that end, ferroelectric δ-PVDF films were investigated as a function of layer thickness down to 10 nm ultra-thin films. Capacitors were fabricated using PEDOT:PSS as non-reactive electrode. Full polarization reversal was obtained at an unprecedented voltage below 5 V. The remanent polarization of 7 μC/cm2 and coercive field of 120 MV/m are independent of layer thickness, demonstrating that ferroelectric switching in δ-PVDF is extrinsic, dominated by inhomogeneous nucleation and growth. The ease of processing of δ-PVDF allowed to determine a lower limit of the critical ferroelectric thickness.

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Low voltage extrinsic switching of ferroelectric δ-PVDF ultra-thin films

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