Low-temperature characteristics of ambipolar SiO2/Si/SiO2 Hall-bar devices

Kei Takashina, Benjamin Gaillard, Yukinori Ono, Yoshiro Hirayama

Research output: Contribution to journalArticle

3 Citations (Scopus)
Original languageEnglish
Pages (from-to)2596-2598
JournalJapanese Journal of Applied Physics
Volume46
Issue number4B
DOIs
Publication statusPublished - 24 Apr 2007

Cite this

Low-temperature characteristics of ambipolar SiO2/Si/SiO2 Hall-bar devices. / Takashina, Kei; Gaillard, Benjamin; Ono, Yukinori; Hirayama, Yoshiro.

In: Japanese Journal of Applied Physics, Vol. 46, No. 4B, 24.04.2007, p. 2596-2598.

Research output: Contribution to journalArticle

Takashina, Kei ; Gaillard, Benjamin ; Ono, Yukinori ; Hirayama, Yoshiro. / Low-temperature characteristics of ambipolar SiO2/Si/SiO2 Hall-bar devices. In: Japanese Journal of Applied Physics. 2007 ; Vol. 46, No. 4B. pp. 2596-2598.
@article{6ef3b87b49c64fa9b163177d39d33a40,
title = "Low-temperature characteristics of ambipolar SiO2/Si/SiO2 Hall-bar devices",
author = "Kei Takashina and Benjamin Gaillard and Yukinori Ono and Yoshiro Hirayama",
year = "2007",
month = "4",
day = "24",
doi = "10.1143/JJAP.46.2596",
language = "English",
volume = "46",
pages = "2596--2598",
journal = "Japanese Journal of Applied Physics",
issn = "0021-4922",
publisher = "Japan Society of Applied Physics",
number = "4B",

}

TY - JOUR

T1 - Low-temperature characteristics of ambipolar SiO2/Si/SiO2 Hall-bar devices

AU - Takashina, Kei

AU - Gaillard, Benjamin

AU - Ono, Yukinori

AU - Hirayama, Yoshiro

PY - 2007/4/24

Y1 - 2007/4/24

UR - http://dx.doi.org/10.1143/JJAP.46.2596

U2 - 10.1143/JJAP.46.2596

DO - 10.1143/JJAP.46.2596

M3 - Article

VL - 46

SP - 2596

EP - 2598

JO - Japanese Journal of Applied Physics

JF - Japanese Journal of Applied Physics

SN - 0021-4922

IS - 4B

ER -