Low-temperature characteristics of ambipolar SiO2/Si/SiO2 Hall-bar devices

Kei Takashina, Benjamin Gaillard, Yukinori Ono, Yoshiro Hirayama

Research output: Contribution to journalArticle

3 Citations (Scopus)
Original languageEnglish
Pages (from-to)2596-2598
JournalJapanese Journal of Applied Physics
Volume46
Issue number4B
DOIs
Publication statusPublished - 24 Apr 2007

Cite this