Low-temperature characteristics of ambipolar SiO2/Si/SiO2 Hall-bar devices

Kei Takashina; Benjamin Gaillard; Yukinori Ono; Yoshiro Hirayama

doi:10.1143/JJAP.46.2596

Low-temperature characteristics of ambipolar SiO2/Si/SiO2 Hall-bar devices

Kei Takashina, Benjamin Gaillard, Yukinori Ono, Yoshiro Hirayama

Department of Physics

Research output: Contribution to journal › Article › peer-review

5 Citations (SciVal)

Original language	English
Pages (from-to)	2596-2598
Journal	Japanese Journal of Applied Physics
Volume	46
Issue number	4B
DOIs	https://doi.org/10.1143/JJAP.46.2596
Publication status	Published - 24 Apr 2007

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10.1143/JJAP.46.2596

http://dx.doi.org/10.1143/JJAP.46.2596

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title = "Low-temperature characteristics of ambipolar SiO2/Si/SiO2 Hall-bar devices",

author = "Kei Takashina and Benjamin Gaillard and Yukinori Ono and Yoshiro Hirayama",

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AU - Takashina, Kei

AU - Gaillard, Benjamin

AU - Ono, Yukinori

AU - Hirayama, Yoshiro

PY - 2007/4/24

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DO - 10.1143/JJAP.46.2596

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JO - Japanese Journal of Applied Physics

JF - Japanese Journal of Applied Physics

IS - 4B

ER -

Low-temperature characteristics of ambipolar SiO2/Si/SiO2 Hall-bar devices

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