Low short term timing jitter in an integrated monolithic extended cavity semiconductor mode-locked laser

A. Wonfor; B. Zhu; I. H. White; R. V. Penty

Low short term timing jitter in an integrated monolithic extended cavity semiconductor mode-locked laser

A. Wonfor, B. Zhu, I. H. White, R. V. Penty

Vice Chancellor's Office

University of Bristol

Research output: Contribution to journal › Conference article › peer-review

1 Citation (SciVal)

Abstract

Jitter measurements were performed on a monolithically integrated active/passive cavity multiple quantum well laser, actively mode-locked at 10 GHz via modulation of an absorber section. Sub-10 ps pulses were produced upon optimization of the drive conditions to the gain, distributed Bragg reflector, and absorber sections. A model was also developed using travelling wave rate equations. Simulation results suggest that spontaneous emission is the dominant cause of jitter, with carrier dynamics having a time constant of the order of 1 ns.

Original language	English
Pages (from-to)	64-65
Number of pages	2
Journal	LEOS Summer Topical Meeting
Publication status	Published - 1 Jan 1997
Event	Proceedings of the 1997 LEOS Summer Topical Meeting - Montreal, Can Duration: 11 Aug 1997 → 15 Aug 1997

ASJC Scopus subject areas

Electrical and Electronic Engineering
Atomic and Molecular Physics, and Optics

Cite this

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title = "Low short term timing jitter in an integrated monolithic extended cavity semiconductor mode-locked laser",

abstract = "Jitter measurements were performed on a monolithically integrated active/passive cavity multiple quantum well laser, actively mode-locked at 10 GHz via modulation of an absorber section. Sub-10 ps pulses were produced upon optimization of the drive conditions to the gain, distributed Bragg reflector, and absorber sections. A model was also developed using travelling wave rate equations. Simulation results suggest that spontaneous emission is the dominant cause of jitter, with carrier dynamics having a time constant of the order of 1 ns.",

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year = "1997",

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language = "English",

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journal = "LEOS Summer Topical Meeting",

issn = "1099-4742",

publisher = "IEEE",

note = "Proceedings of the 1997 LEOS Summer Topical Meeting ; Conference date: 11-08-1997 Through 15-08-1997",

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T1 - Low short term timing jitter in an integrated monolithic extended cavity semiconductor mode-locked laser

AU - Wonfor, A.

AU - Zhu, B.

AU - White, I. H.

AU - Penty, R. V.

PY - 1997/1/1

Y1 - 1997/1/1

N2 - Jitter measurements were performed on a monolithically integrated active/passive cavity multiple quantum well laser, actively mode-locked at 10 GHz via modulation of an absorber section. Sub-10 ps pulses were produced upon optimization of the drive conditions to the gain, distributed Bragg reflector, and absorber sections. A model was also developed using travelling wave rate equations. Simulation results suggest that spontaneous emission is the dominant cause of jitter, with carrier dynamics having a time constant of the order of 1 ns.

AB - Jitter measurements were performed on a monolithically integrated active/passive cavity multiple quantum well laser, actively mode-locked at 10 GHz via modulation of an absorber section. Sub-10 ps pulses were produced upon optimization of the drive conditions to the gain, distributed Bragg reflector, and absorber sections. A model was also developed using travelling wave rate equations. Simulation results suggest that spontaneous emission is the dominant cause of jitter, with carrier dynamics having a time constant of the order of 1 ns.

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M3 - Conference article

AN - SCOPUS:0030649887

SN - 1099-4742

SP - 64

EP - 65

JO - LEOS Summer Topical Meeting

JF - LEOS Summer Topical Meeting

T2 - Proceedings of the 1997 LEOS Summer Topical Meeting

Y2 - 11 August 1997 through 15 August 1997

ER -

Low short term timing jitter in an integrated monolithic extended cavity semiconductor mode-locked laser

Abstract

ASJC Scopus subject areas

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