Low short term timing jitter in an integrated monolithic extended cavity semiconductor mode-locked laser

A. Wonfor, B. Zhu, I. H. White, R. V. Penty

Research output: Contribution to journalConference article

1 Citation (Scopus)

Abstract

Jitter measurements were performed on a monolithically integrated active/passive cavity multiple quantum well laser, actively mode-locked at 10 GHz via modulation of an absorber section. Sub-10 ps pulses were produced upon optimization of the drive conditions to the gain, distributed Bragg reflector, and absorber sections. A model was also developed using travelling wave rate equations. Simulation results suggest that spontaneous emission is the dominant cause of jitter, with carrier dynamics having a time constant of the order of 1 ns.

Original languageEnglish
Pages (from-to)64-65
Number of pages2
JournalLEOS Summer Topical Meeting
Publication statusPublished - 1 Jan 1997
EventProceedings of the 1997 LEOS Summer Topical Meeting - Montreal, Can
Duration: 11 Aug 199715 Aug 1997

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Atomic and Molecular Physics, and Optics

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