Low partial pressure chemical vapor deposition of graphene on copper

Jie Sun, Niclas Lindvall, Matthew Cole, Koh T.T. Angel, Teng Wang, Kenneth B.K. Teo, Daniel H.C. Chua, Johan Liu, August Yurgens

Research output: Contribution to journalArticle

49 Citations (Scopus)

Abstract

A systematic study of the Cu-catalyzed chemical vapor deposition of graphene under extremely low partial pressure is carried out. A carbon precursor supply of just P CH4∼ 0.009 mbar during the deposition favors the formation of large-area uniform monolayer graphene verified by Raman spectra. A diluted HNO 3 solution is used to remove Cu before transferring graphene onto SiO 2/Si substrates or carbon grids. The graphene can be made suspended over a ∼12 μm distance, indicating its good mechanical properties. Electron transport measurements show the graphene sheet resistance of ∼0.6 kΩ/□ at zero gate voltage. The mobilities of electrons and holes are ∼1800 cm 2/Vs at 4.2 K and ∼1200 cm 2/Vs at room temperature.

Original languageEnglish
Article number5966348
Pages (from-to)255-260
Number of pages6
JournalIEEE Transactions on Nanotechnology
Volume11
Issue number2
DOIs
Publication statusPublished - Mar 2012

Keywords

  • Chemical vapor deposition
  • graphene
  • low partial pressure
  • nanoelectronics
  • wet transfer

ASJC Scopus subject areas

  • Computer Science Applications
  • Electrical and Electronic Engineering

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