Low partial pressure chemical vapor deposition of graphene on copper

Jie Sun; Niclas Lindvall; Matthew Cole; Koh T.T. Angel; Teng Wang; Kenneth B.K. Teo; Daniel H.C. Chua; Johan Liu; August Yurgens

doi:10.1109/TNANO.2011.2160729

Low partial pressure chemical vapor deposition of graphene on copper

Jie Sun, Niclas Lindvall, Matthew Cole, Koh T.T. Angel, Teng Wang, Kenneth B.K. Teo, Daniel H.C. Chua, Johan Liu, August Yurgens

Research output: Contribution to journal › Article › peer-review

58 Citations (SciVal)

Abstract

A systematic study of the Cu-catalyzed chemical vapor deposition of graphene under extremely low partial pressure is carried out. A carbon precursor supply of just P _CH4∼ 0.009 mbar during the deposition favors the formation of large-area uniform monolayer graphene verified by Raman spectra. A diluted HNO ₃ solution is used to remove Cu before transferring graphene onto SiO ₂/Si substrates or carbon grids. The graphene can be made suspended over a ∼12 μm distance, indicating its good mechanical properties. Electron transport measurements show the graphene sheet resistance of ∼0.6 kΩ/□ at zero gate voltage. The mobilities of electrons and holes are ∼1800 cm ₂/Vs at 4.2 K and ∼1200 cm ₂/Vs at room temperature.

Original language	English
Article number	5966348
Pages (from-to)	255-260
Number of pages	6
Journal	IEEE Transactions on Nanotechnology
Volume	11
Issue number	2
DOIs	https://doi.org/10.1109/TNANO.2011.2160729
Publication status	Published - Mar 2012

Keywords

Chemical vapor deposition
graphene
low partial pressure
nanoelectronics
wet transfer

ASJC Scopus subject areas

Computer Science Applications
Electrical and Electronic Engineering

Access to Document

10.1109/TNANO.2011.2160729

Cite this

@article{c04a6ff41e5b4d8498d5aca2e775dc0f,

title = "Low partial pressure chemical vapor deposition of graphene on copper",

abstract = "A systematic study of the Cu-catalyzed chemical vapor deposition of graphene under extremely low partial pressure is carried out. A carbon precursor supply of just P CH4∼ 0.009 mbar during the deposition favors the formation of large-area uniform monolayer graphene verified by Raman spectra. A diluted HNO 3 solution is used to remove Cu before transferring graphene onto SiO 2/Si substrates or carbon grids. The graphene can be made suspended over a ∼12 μm distance, indicating its good mechanical properties. Electron transport measurements show the graphene sheet resistance of ∼0.6 kΩ/□ at zero gate voltage. The mobilities of electrons and holes are ∼1800 cm 2/Vs at 4.2 K and ∼1200 cm 2/Vs at room temperature. ",

keywords = "Chemical vapor deposition, graphene, low partial pressure, nanoelectronics, wet transfer",

author = "Jie Sun and Niclas Lindvall and Matthew Cole and Angel, {Koh T.T.} and Teng Wang and Teo, {Kenneth B.K.} and Chua, {Daniel H.C.} and Johan Liu and August Yurgens",

year = "2012",

month = mar,

doi = "10.1109/TNANO.2011.2160729",

language = "English",

volume = "11",

pages = "255--260",

journal = "IEEE Transactions on Nanotechnology",

issn = "1536-125X",

publisher = "IEEE",

number = "2",

}

TY - JOUR

T1 - Low partial pressure chemical vapor deposition of graphene on copper

AU - Sun, Jie

AU - Lindvall, Niclas

AU - Cole, Matthew

AU - Angel, Koh T.T.

AU - Wang, Teng

AU - Teo, Kenneth B.K.

AU - Chua, Daniel H.C.

AU - Liu, Johan

AU - Yurgens, August

PY - 2012/3

Y1 - 2012/3

N2 - A systematic study of the Cu-catalyzed chemical vapor deposition of graphene under extremely low partial pressure is carried out. A carbon precursor supply of just P CH4∼ 0.009 mbar during the deposition favors the formation of large-area uniform monolayer graphene verified by Raman spectra. A diluted HNO 3 solution is used to remove Cu before transferring graphene onto SiO 2/Si substrates or carbon grids. The graphene can be made suspended over a ∼12 μm distance, indicating its good mechanical properties. Electron transport measurements show the graphene sheet resistance of ∼0.6 kΩ/□ at zero gate voltage. The mobilities of electrons and holes are ∼1800 cm 2/Vs at 4.2 K and ∼1200 cm 2/Vs at room temperature.

AB - A systematic study of the Cu-catalyzed chemical vapor deposition of graphene under extremely low partial pressure is carried out. A carbon precursor supply of just P CH4∼ 0.009 mbar during the deposition favors the formation of large-area uniform monolayer graphene verified by Raman spectra. A diluted HNO 3 solution is used to remove Cu before transferring graphene onto SiO 2/Si substrates or carbon grids. The graphene can be made suspended over a ∼12 μm distance, indicating its good mechanical properties. Electron transport measurements show the graphene sheet resistance of ∼0.6 kΩ/□ at zero gate voltage. The mobilities of electrons and holes are ∼1800 cm 2/Vs at 4.2 K and ∼1200 cm 2/Vs at room temperature.

KW - Chemical vapor deposition

KW - graphene

KW - low partial pressure

KW - nanoelectronics

KW - wet transfer

UR - http://www.scopus.com/inward/record.url?scp=84863338266&partnerID=8YFLogxK

U2 - 10.1109/TNANO.2011.2160729

DO - 10.1109/TNANO.2011.2160729

M3 - Article

AN - SCOPUS:84863338266

SN - 1536-125X

VL - 11

SP - 255

EP - 260

JO - IEEE Transactions on Nanotechnology

JF - IEEE Transactions on Nanotechnology

IS - 2

M1 - 5966348

ER -

Low partial pressure chemical vapor deposition of graphene on copper

Abstract

Keywords

ASJC Scopus subject areas

Access to Document

Other files and links

Fingerprint

Cite this