Low-noise monolithic mode-locked semiconductor lasers through low-dimensional structures

Kresten Yvind, David Larsson, Jesper Mørk, Jørn M. Hvam, Mark Thompson, Richard Penty, Ian White

Research output: Chapter in Book/Report/Conference proceedingConference contribution

5 Citations (Scopus)

Abstract

The design of a quantum well (QW) based high-saturation energy and low-loss gain region allows a high power density which ensures efficient saturation of the absorber, increases the efficiency, and lowers the noise of monolithic modelocked lasers. This is illustrated though 10 GHz all-active lasers with different number of quantum wells. By comparing a 40 GHz quantum dot and a 40 GHz quantum well laser we discuss the physical difference in the dynamics of the devices. The slow dynamics of quantum dots (QD), results in low self-phase modulation for picosecond pulses and a strong damping of intensity fluctuations, which gives rise to clean optical spectra and very low noise for passive mode-locking.

Original languageEnglish
Title of host publicationNovel In-Plane Semiconductor Lasers VII
DOIs
Publication statusPublished - 20 Mar 2008
EventNovel In-Plane Semiconductor Lasers VII - San Jose, CA, USA United States
Duration: 21 Jan 200724 Jan 2007

Publication series

NameProceedings of SPIE - The International Society for Optical Engineering
Volume6909
ISSN (Print)0277-786X

Conference

ConferenceNovel In-Plane Semiconductor Lasers VII
CountryUSA United States
CitySan Jose, CA
Period21/01/0724/01/07

Keywords

  • Device design
  • Dynamics
  • Mode-locked lasers
  • Noise
  • Quantum confined structures
  • Semiconductor optical devices

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Computer Science Applications
  • Applied Mathematics
  • Electrical and Electronic Engineering

Cite this

Yvind, K., Larsson, D., Mørk, J., Hvam, J. M., Thompson, M., Penty, R., & White, I. (2008). Low-noise monolithic mode-locked semiconductor lasers through low-dimensional structures. In Novel In-Plane Semiconductor Lasers VII [69090A] (Proceedings of SPIE - The International Society for Optical Engineering; Vol. 6909). https://doi.org/10.1117/12.768641