Low-frequency diffusion noise in resistive-switching memories based on metal-oxide polymer structure

Paulo R F Rocha; Henrique Leonel Gomes; Lode K J Vandamme; Qian Chen; Asal Kiazadeh; Dago M. De Leeuw; Stefan C J Meskers

doi:10.1109/TED.2012.2204059

Low-frequency diffusion noise in resistive-switching memories based on metal-oxide polymer structure

Paulo R F Rocha
, Henrique Leonel Gomes
, Lode K J Vandamme
, Qian Chen
, Asal Kiazadeh
, Dago M. De Leeuw
, Stefan C J Meskers

Department of Electronic & Electrical Engineering

Instituto de Telecomunicações
University of Algarve
Eindhoven University of Technology
Rijksuniversiteit Groningen

Research output: Contribution to journal › Article › peer-review

16 Citations (SciVal)

Abstract

Low-frequency noise is studied in resistive-switching memories based on metal-oxide polymer diodes. The noise spectral power follows a 1/f ^γ behavior, with γ = 1 in the ohmic region and with γ = 3/2 at high bias beyond the ohmic region. The exponent γ = 3/2 is explained as noise caused by Brownian motion or diffusion of defects which induce fluctuations in diode current. The figure of merit to classify 1/f noise in thin films has an estimated value of 10 ^-21 cm ²Ω, which is typical for metals or doped semiconductors. This value in combination with the low diode current indicates that the 1/f noise is generated in the narrow localized regions in the polymer between the contacts. The analysis unambiguously shows that the current in bistable nonvolatile memories is filamentary.

Original language	English
Article number	6243198
Pages (from-to)	2483-2487
Number of pages	5
Journal	IEEE Transactions on Electron Devices
Volume	59
Issue number	9
DOIs	https://doi.org/10.1109/TED.2012.2204059
Publication status	Published - 18 Jul 2012

Keywords

Diffusion noise
electrical properties
low-frequency noise
nonvolatile memory
random telegraph noise
resistive switching

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

Access to Document

10.1109/TED.2012.2204059

Cite this

@article{93c73569d1ab4cc3beec8d5a49ca797c,

title = "Low-frequency diffusion noise in resistive-switching memories based on metal-oxide polymer structure",

abstract = "Low-frequency noise is studied in resistive-switching memories based on metal-oxide polymer diodes. The noise spectral power follows a 1/f γ behavior, with γ = 1 in the ohmic region and with γ = 3/2 at high bias beyond the ohmic region. The exponent γ = 3/2 is explained as noise caused by Brownian motion or diffusion of defects which induce fluctuations in diode current. The figure of merit to classify 1/f noise in thin films has an estimated value of 10 -21 cm 2Ω, which is typical for metals or doped semiconductors. This value in combination with the low diode current indicates that the 1/f noise is generated in the narrow localized regions in the polymer between the contacts. The analysis unambiguously shows that the current in bistable nonvolatile memories is filamentary.",

keywords = "Diffusion noise, electrical properties, low-frequency noise, nonvolatile memory, random telegraph noise, resistive switching",

author = "Rocha, \{Paulo R F\} and Gomes, \{Henrique Leonel\} and Vandamme, \{Lode K J\} and Qian Chen and Asal Kiazadeh and \{De Leeuw\}, \{Dago M.\} and Meskers, \{Stefan C J\}",

year = "2012",

month = jul,

day = "18",

doi = "10.1109/TED.2012.2204059",

language = "English",

volume = "59",

pages = "2483--2487",

journal = "IEEE Transactions on Electron Devices",

issn = "0018-9383",

publisher = "IEEE",

number = "9",

}

TY - JOUR

T1 - Low-frequency diffusion noise in resistive-switching memories based on metal-oxide polymer structure

AU - Rocha, Paulo R F

AU - Gomes, Henrique Leonel

AU - Vandamme, Lode K J

AU - Chen, Qian

AU - Kiazadeh, Asal

AU - De Leeuw, Dago M.

AU - Meskers, Stefan C J

PY - 2012/7/18

Y1 - 2012/7/18

N2 - Low-frequency noise is studied in resistive-switching memories based on metal-oxide polymer diodes. The noise spectral power follows a 1/f γ behavior, with γ = 1 in the ohmic region and with γ = 3/2 at high bias beyond the ohmic region. The exponent γ = 3/2 is explained as noise caused by Brownian motion or diffusion of defects which induce fluctuations in diode current. The figure of merit to classify 1/f noise in thin films has an estimated value of 10 -21 cm 2Ω, which is typical for metals or doped semiconductors. This value in combination with the low diode current indicates that the 1/f noise is generated in the narrow localized regions in the polymer between the contacts. The analysis unambiguously shows that the current in bistable nonvolatile memories is filamentary.

AB - Low-frequency noise is studied in resistive-switching memories based on metal-oxide polymer diodes. The noise spectral power follows a 1/f γ behavior, with γ = 1 in the ohmic region and with γ = 3/2 at high bias beyond the ohmic region. The exponent γ = 3/2 is explained as noise caused by Brownian motion or diffusion of defects which induce fluctuations in diode current. The figure of merit to classify 1/f noise in thin films has an estimated value of 10 -21 cm 2Ω, which is typical for metals or doped semiconductors. This value in combination with the low diode current indicates that the 1/f noise is generated in the narrow localized regions in the polymer between the contacts. The analysis unambiguously shows that the current in bistable nonvolatile memories is filamentary.

KW - Diffusion noise

KW - electrical properties

KW - low-frequency noise

KW - nonvolatile memory

KW - random telegraph noise

KW - resistive switching

UR - https://www.scopus.com/pages/publications/84865457292

UR - https://doi.org/10.1109/TED.2012.2204059

U2 - 10.1109/TED.2012.2204059

DO - 10.1109/TED.2012.2204059

M3 - Article

AN - SCOPUS:84865457292

SN - 0018-9383

VL - 59

SP - 2483

EP - 2487

JO - IEEE Transactions on Electron Devices

JF - IEEE Transactions on Electron Devices

IS - 9

M1 - 6243198

ER -

Low-frequency diffusion noise in resistive-switching memories based on metal-oxide polymer structure

Abstract

Keywords

ASJC Scopus subject areas

Access to Document

Other files and links

Fingerprint

Cite this