Abstract
Low-frequency noise is studied in resistive-switching memories based on metal-oxide polymer diodes. The noise spectral power follows a 1/f γ behavior, with γ = 1 in the ohmic region and with γ = 3/2 at high bias beyond the ohmic region. The exponent γ = 3/2 is explained as noise caused by Brownian motion or diffusion of defects which induce fluctuations in diode current. The figure of merit to classify 1/f noise in thin films has an estimated value of 10 -21 cm 2Ω, which is typical for metals or doped semiconductors. This value in combination with the low diode current indicates that the 1/f noise is generated in the narrow localized regions in the polymer between the contacts. The analysis unambiguously shows that the current in bistable nonvolatile memories is filamentary.
Original language | English |
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Article number | 6243198 |
Pages (from-to) | 2483-2487 |
Number of pages | 5 |
Journal | IEEE Transactions on Electron Devices |
Volume | 59 |
Issue number | 9 |
DOIs | |
Publication status | Published - 18 Jul 2012 |
Keywords
- Diffusion noise
- electrical properties
- low-frequency noise
- nonvolatile memory
- random telegraph noise
- resistive switching
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Electrical and Electronic Engineering