Abstract
We have systematically studied quantum transport in a short trilayer-graphene field-effect transistor. Close to the charge neutrality point, our magnetoconductance data are well described by the theory of weak localization in monolayer graphene. However, as the carrier density is increased we find a complex evolution of the low field magnetoconductance that originates from a combination of the monolayer-like and bilayer-like band structures. The increased phase coherence length at high hole densities takes our shortest devices into the mesoscopic regime with the appearance of significant conductance fluctuations on top of the localization effects. Although these are aperiodic in gate voltage, they exhibit a quasi-periodic behaviour as a function of magnetic field. We show that this is consistent with the interference of discrete trajectories in open quantum dots and discuss the possible origin of these in our devices.
| Original language | English |
|---|---|
| Article number | 115010 |
| Journal | Semiconductor Science and Technology |
| Volume | 29 |
| Issue number | 11 |
| DOIs | |
| Publication status | Published - Nov 2014 |
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Keywords
- conductance fluctuations
- mesoscopic transport
- trilayer graphene
- weak localization
Cite this
Localization and field-periodic conductance fluctuations in trilayer graphene. / El-Bana, Mohammed S.; Wolverson, Daniel; Horsell, David W.; Bending, Simon J.
In: Semiconductor Science and Technology, Vol. 29, No. 11, 115010, 11.2014.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - Localization and field-periodic conductance fluctuations in trilayer graphene
AU - El-Bana, Mohammed S.
AU - Wolverson, Daniel
AU - Horsell, David W.
AU - Bending, Simon J.
PY - 2014/11
Y1 - 2014/11
N2 - We have systematically studied quantum transport in a short trilayer-graphene field-effect transistor. Close to the charge neutrality point, our magnetoconductance data are well described by the theory of weak localization in monolayer graphene. However, as the carrier density is increased we find a complex evolution of the low field magnetoconductance that originates from a combination of the monolayer-like and bilayer-like band structures. The increased phase coherence length at high hole densities takes our shortest devices into the mesoscopic regime with the appearance of significant conductance fluctuations on top of the localization effects. Although these are aperiodic in gate voltage, they exhibit a quasi-periodic behaviour as a function of magnetic field. We show that this is consistent with the interference of discrete trajectories in open quantum dots and discuss the possible origin of these in our devices.
AB - We have systematically studied quantum transport in a short trilayer-graphene field-effect transistor. Close to the charge neutrality point, our magnetoconductance data are well described by the theory of weak localization in monolayer graphene. However, as the carrier density is increased we find a complex evolution of the low field magnetoconductance that originates from a combination of the monolayer-like and bilayer-like band structures. The increased phase coherence length at high hole densities takes our shortest devices into the mesoscopic regime with the appearance of significant conductance fluctuations on top of the localization effects. Although these are aperiodic in gate voltage, they exhibit a quasi-periodic behaviour as a function of magnetic field. We show that this is consistent with the interference of discrete trajectories in open quantum dots and discuss the possible origin of these in our devices.
KW - conductance fluctuations
KW - mesoscopic transport
KW - trilayer graphene
KW - weak localization
UR - http://www.scopus.com/inward/record.url?scp=84908042726&partnerID=8YFLogxK
UR - http://dx.doi.org/10.1088/0268-1242/29/11/115010
U2 - 10.1088/0268-1242/29/11/115010
DO - 10.1088/0268-1242/29/11/115010
M3 - Article
AN - SCOPUS:84908042726
VL - 29
JO - Semiconductor Science and Technology
JF - Semiconductor Science and Technology
SN - 0268-1242
IS - 11
M1 - 115010
ER -