Light emission from InGaN quantum wells grown on the facets of closely spaced GaN nano-pyramids formed by nano-imprinting

Chaowang Liu; Alexander Satka; Lethy Krishnan Jagadamma; Paul R. Edwards; Duncan Allsopp; Robert W. Martin; Philip Shields; Jaroslav Kovac; Frantisek Uherek; Wang N Wang

doi:10.1143/APEX.2.121002

Light emission from InGaN quantum wells grown on the facets of closely spaced GaN nano-pyramids formed by nano-imprinting

Chaowang Liu, Alexander Satka, Lethy Krishnan Jagadamma, Paul R. Edwards, Duncan Allsopp, Robert W. Martin, Philip Shields, Jaroslav Kovac, Frantisek Uherek, Wang N Wang

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30 Citations (SciVal)

Abstract

InxGa1-xN/GaN quantum wells have been grown on the {10 (1) over bar1} facets of dense arrays of self-assembled GaN nano-pyramids formed by selective area growth and characterised by high spatial resolution cathodoluminescence. The pyramids are shown to have significantly reduced defect (green-yellow) band emission and the quantum well luminescence is correspondingly intense. The peak energy of this luminescence is shown to blue-shift as the sampled region is moved up the pyramid facets, revealing that InN incorporation in such closely spaced epitaxial nanostructures differs from that in widely spaced micron-size pyramidal structures decreasing rather than increasing towards the nano-pyramid tips. (C) 2009 The Japan Society of Applied Physics DOI: 10.1143/APEX.2.121002

Original language	English
Article number	121002
Number of pages	3
Journal	Applied Physics Express
Volume	2
Issue number	12
Early online date	4 Dec 2009
DOIs	https://doi.org/10.1143/APEX.2.121002
Publication status	Published - Dec 2009

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@article{883f69af42aa4b298637a61f62d41787,

title = "Light emission from InGaN quantum wells grown on the facets of closely spaced GaN nano-pyramids formed by nano-imprinting",

abstract = "InxGa1-xN/GaN quantum wells have been grown on the \{10 (1) over bar1\} facets of dense arrays of self-assembled GaN nano-pyramids formed by selective area growth and characterised by high spatial resolution cathodoluminescence. The pyramids are shown to have significantly reduced defect (green-yellow) band emission and the quantum well luminescence is correspondingly intense. The peak energy of this luminescence is shown to blue-shift as the sampled region is moved up the pyramid facets, revealing that InN incorporation in such closely spaced epitaxial nanostructures differs from that in widely spaced micron-size pyramidal structures decreasing rather than increasing towards the nano-pyramid tips. (C) 2009 The Japan Society of Applied Physics DOI: 10.1143/APEX.2.121002",

author = "Chaowang Liu and Alexander Satka and Jagadamma, \{Lethy Krishnan\} and Edwards, \{Paul R.\} and Duncan Allsopp and Martin, \{Robert W.\} and Philip Shields and Jaroslav Kovac and Frantisek Uherek and Wang, \{Wang N\}",

year = "2009",

month = dec,

doi = "10.1143/APEX.2.121002",

language = "English",

volume = "2",

journal = "Applied Physics Express",

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publisher = "Japan Society of Applied Physics",

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T1 - Light emission from InGaN quantum wells grown on the facets of closely spaced GaN nano-pyramids formed by nano-imprinting

AU - Liu, Chaowang

AU - Satka, Alexander

AU - Jagadamma, Lethy Krishnan

AU - Edwards, Paul R.

AU - Allsopp, Duncan

AU - Martin, Robert W.

AU - Shields, Philip

AU - Kovac, Jaroslav

AU - Uherek, Frantisek

AU - Wang, Wang N

PY - 2009/12

Y1 - 2009/12

N2 - InxGa1-xN/GaN quantum wells have been grown on the {10 (1) over bar1} facets of dense arrays of self-assembled GaN nano-pyramids formed by selective area growth and characterised by high spatial resolution cathodoluminescence. The pyramids are shown to have significantly reduced defect (green-yellow) band emission and the quantum well luminescence is correspondingly intense. The peak energy of this luminescence is shown to blue-shift as the sampled region is moved up the pyramid facets, revealing that InN incorporation in such closely spaced epitaxial nanostructures differs from that in widely spaced micron-size pyramidal structures decreasing rather than increasing towards the nano-pyramid tips. (C) 2009 The Japan Society of Applied Physics DOI: 10.1143/APEX.2.121002

AB - InxGa1-xN/GaN quantum wells have been grown on the {10 (1) over bar1} facets of dense arrays of self-assembled GaN nano-pyramids formed by selective area growth and characterised by high spatial resolution cathodoluminescence. The pyramids are shown to have significantly reduced defect (green-yellow) band emission and the quantum well luminescence is correspondingly intense. The peak energy of this luminescence is shown to blue-shift as the sampled region is moved up the pyramid facets, revealing that InN incorporation in such closely spaced epitaxial nanostructures differs from that in widely spaced micron-size pyramidal structures decreasing rather than increasing towards the nano-pyramid tips. (C) 2009 The Japan Society of Applied Physics DOI: 10.1143/APEX.2.121002

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UR - http://dx.doi.org/10.1143/APEX.2.121002

U2 - 10.1143/APEX.2.121002

DO - 10.1143/APEX.2.121002

M3 - Article

SN - 1882-0778

VL - 2

JO - Applied Physics Express

JF - Applied Physics Express

IS - 12

M1 - 121002

ER -

Light emission from InGaN quantum wells grown on the facets of closely spaced GaN nano-pyramids formed by nano-imprinting

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Light emission from InGaN quantum wells grown on the facets of closely spaced GaN nano-pyramids formed by nano-imprinting

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