Light emission from InGaN quantum wells grown on the facets of closely spaced GaN nano-pyramids formed by nano-imprinting

Chaowang Liu, Alexander Satka, Lethy Krishnan Jagadamma, Paul R. Edwards, Duncan Allsopp, Robert W. Martin, Philip Shields, Jaroslav Kovac, Frantisek Uherek, Wang N Wang

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Abstract

InxGa1-xN/GaN quantum wells have been grown on the {10 (1) over bar1} facets of dense arrays of self-assembled GaN nano-pyramids formed by selective area growth and characterised by high spatial resolution cathodoluminescence. The pyramids are shown to have significantly reduced defect (green-yellow) band emission and the quantum well luminescence is correspondingly intense. The peak energy of this luminescence is shown to blue-shift as the sampled region is moved up the pyramid facets, revealing that InN incorporation in such closely spaced epitaxial nanostructures differs from that in widely spaced micron-size pyramidal structures decreasing rather than increasing towards the nano-pyramid tips. (C) 2009 The Japan Society of Applied Physics DOI: 10.1143/APEX.2.121002
Original languageEnglish
Article number121002
Number of pages3
JournalApplied Physics Express
Volume2
Issue number12
Early online date4 Dec 2009
DOIs
Publication statusPublished - Dec 2009

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    Liu, C., Satka, A., Jagadamma, L. K., Edwards, P. R., Allsopp, D., Martin, R. W., Shields, P., Kovac, J., Uherek, F., & Wang, W. N. (2009). Light emission from InGaN quantum wells grown on the facets of closely spaced GaN nano-pyramids formed by nano-imprinting. Applied Physics Express, 2(12), [121002]. https://doi.org/10.1143/APEX.2.121002