Light emission from InGaN quantum wells grown on the facets of closely spaced GaN nano-pyramids formed by nano-imprinting

Chaowang Liu, Alexander Satka, Lethy Krishnan Jagadamma, Paul R. Edwards, Duncan Allsopp, Robert W. Martin, Philip Shields, Jaroslav Kovac, Frantisek Uherek, Wang N Wang

Research output: Contribution to journalArticle

26 Citations (Scopus)

Abstract

InxGa1-xN/GaN quantum wells have been grown on the {10 (1) over bar1} facets of dense arrays of self-assembled GaN nano-pyramids formed by selective area growth and characterised by high spatial resolution cathodoluminescence. The pyramids are shown to have significantly reduced defect (green-yellow) band emission and the quantum well luminescence is correspondingly intense. The peak energy of this luminescence is shown to blue-shift as the sampled region is moved up the pyramid facets, revealing that InN incorporation in such closely spaced epitaxial nanostructures differs from that in widely spaced micron-size pyramidal structures decreasing rather than increasing towards the nano-pyramid tips. (C) 2009 The Japan Society of Applied Physics DOI: 10.1143/APEX.2.121002
Original languageEnglish
Article number121002
Number of pages3
JournalApplied Physics Express
Volume2
Issue number12
Early online date4 Dec 2009
DOIs
Publication statusPublished - Dec 2009

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Light emission
pyramids
Semiconductor quantum wells
light emission
Luminescence
flat surfaces
quantum wells
Cathodoluminescence
Nanostructures
Physics
luminescence
Defects
cathodoluminescence
blue shift
Japan
spatial resolution
physics
high resolution
defects
energy

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Liu, C., Satka, A., Jagadamma, L. K., Edwards, P. R., Allsopp, D., Martin, R. W., ... Wang, W. N. (2009). Light emission from InGaN quantum wells grown on the facets of closely spaced GaN nano-pyramids formed by nano-imprinting. Applied Physics Express, 2(12), [121002]. https://doi.org/10.1143/APEX.2.121002

Light emission from InGaN quantum wells grown on the facets of closely spaced GaN nano-pyramids formed by nano-imprinting. / Liu, Chaowang; Satka, Alexander; Jagadamma, Lethy Krishnan; Edwards, Paul R.; Allsopp, Duncan; Martin, Robert W.; Shields, Philip; Kovac, Jaroslav; Uherek, Frantisek; Wang, Wang N.

In: Applied Physics Express, Vol. 2, No. 12, 121002, 12.2009.

Research output: Contribution to journalArticle

Liu, C, Satka, A, Jagadamma, LK, Edwards, PR, Allsopp, D, Martin, RW, Shields, P, Kovac, J, Uherek, F & Wang, WN 2009, 'Light emission from InGaN quantum wells grown on the facets of closely spaced GaN nano-pyramids formed by nano-imprinting', Applied Physics Express, vol. 2, no. 12, 121002. https://doi.org/10.1143/APEX.2.121002
Liu, Chaowang ; Satka, Alexander ; Jagadamma, Lethy Krishnan ; Edwards, Paul R. ; Allsopp, Duncan ; Martin, Robert W. ; Shields, Philip ; Kovac, Jaroslav ; Uherek, Frantisek ; Wang, Wang N. / Light emission from InGaN quantum wells grown on the facets of closely spaced GaN nano-pyramids formed by nano-imprinting. In: Applied Physics Express. 2009 ; Vol. 2, No. 12.
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