Leakage current studies of thick a-Si:H detectors under high electric field conditions

Adelina Ilie, B Equer, T Pochet

Research output: Contribution to journalArticle

3 Citations (Scopus)

Abstract

The leakage current of thick (up to 20 μm) a-Si:H p-i-n diodes developed for nuclear radiation detection were investigated. Performing current-voltage measurements at different temperatures and over a large electric field domain (up to 106 V/cm), different leakage current mechanisms, such as electron injection and field enhanced thermal generation, have been identified. The influence of the p layer thickness on the electronic injection was clearly demonstrated by means of spectral response experiments. The effect of a device forming procedure on the leakage current and on the noise power spectra of the devices has also been studied.
Original languageEnglish
Pages (from-to)18 - 22
Number of pages5
JournalNuclear Instruments and Methods in Physics Research Section A Accelerators Spectrometers Detectors and Associated Equipment
Volume380
Issue number1-2
DOIs
Publication statusPublished - 1 Oct 1996

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Leakage currents
leakage
Electric fields
Detectors
electric fields
detectors
Electron injection
Voltage measurement
Electric current measurement
injection
Power spectrum
nuclear radiation
p-i-n diodes
Diodes
noise spectra
spectral sensitivity
electrical measurement
power spectra
Radiation
Experiments

Cite this

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title = "Leakage current studies of thick a-Si:H detectors under high electric field conditions",
abstract = "The leakage current of thick (up to 20 μm) a-Si:H p-i-n diodes developed for nuclear radiation detection were investigated. Performing current-voltage measurements at different temperatures and over a large electric field domain (up to 106 V/cm), different leakage current mechanisms, such as electron injection and field enhanced thermal generation, have been identified. The influence of the p layer thickness on the electronic injection was clearly demonstrated by means of spectral response experiments. The effect of a device forming procedure on the leakage current and on the noise power spectra of the devices has also been studied.",
author = "Adelina Ilie and B Equer and T Pochet",
year = "1996",
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journal = "Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment",
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TY - JOUR

T1 - Leakage current studies of thick a-Si:H detectors under high electric field conditions

AU - Ilie, Adelina

AU - Equer, B

AU - Pochet, T

PY - 1996/10/1

Y1 - 1996/10/1

N2 - The leakage current of thick (up to 20 μm) a-Si:H p-i-n diodes developed for nuclear radiation detection were investigated. Performing current-voltage measurements at different temperatures and over a large electric field domain (up to 106 V/cm), different leakage current mechanisms, such as electron injection and field enhanced thermal generation, have been identified. The influence of the p layer thickness on the electronic injection was clearly demonstrated by means of spectral response experiments. The effect of a device forming procedure on the leakage current and on the noise power spectra of the devices has also been studied.

AB - The leakage current of thick (up to 20 μm) a-Si:H p-i-n diodes developed for nuclear radiation detection were investigated. Performing current-voltage measurements at different temperatures and over a large electric field domain (up to 106 V/cm), different leakage current mechanisms, such as electron injection and field enhanced thermal generation, have been identified. The influence of the p layer thickness on the electronic injection was clearly demonstrated by means of spectral response experiments. The effect of a device forming procedure on the leakage current and on the noise power spectra of the devices has also been studied.

UR - http://dx.doi.org/10.1016/S0168-9002(96)00291-4

U2 - 10.1016/S0168-9002(96)00291-4

DO - 10.1016/S0168-9002(96)00291-4

M3 - Article

VL - 380

SP - 18

EP - 22

JO - Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment

JF - Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment

SN - 0168-9002

IS - 1-2

ER -