TY - JOUR
T1 - Leakage current studies of thick a-Si:H detectors under high electric field conditions
AU - Ilie, Adelina
AU - Equer, B
AU - Pochet, T
PY - 1996/10/1
Y1 - 1996/10/1
N2 - The leakage current of thick (up to 20 μm) a-Si:H p-i-n diodes developed for nuclear radiation detection were investigated. Performing current-voltage measurements at different temperatures and over a large electric field domain (up to 106 V/cm), different leakage current mechanisms, such as electron injection and field enhanced thermal generation, have been identified. The influence of the p layer thickness on the electronic injection was clearly demonstrated by means of spectral response experiments. The effect of a device forming procedure on the leakage current and on the noise power spectra of the devices has also been studied.
AB - The leakage current of thick (up to 20 μm) a-Si:H p-i-n diodes developed for nuclear radiation detection were investigated. Performing current-voltage measurements at different temperatures and over a large electric field domain (up to 106 V/cm), different leakage current mechanisms, such as electron injection and field enhanced thermal generation, have been identified. The influence of the p layer thickness on the electronic injection was clearly demonstrated by means of spectral response experiments. The effect of a device forming procedure on the leakage current and on the noise power spectra of the devices has also been studied.
UR - http://dx.doi.org/10.1016/S0168-9002(96)00291-4
U2 - 10.1016/S0168-9002(96)00291-4
DO - 10.1016/S0168-9002(96)00291-4
M3 - Article
VL - 380
SP - 18
EP - 22
JO - Nuclear Instruments and Methods in Physics Research Section A Accelerators Spectrometers Detectors and Associated Equipment
JF - Nuclear Instruments and Methods in Physics Research Section A Accelerators Spectrometers Detectors and Associated Equipment
IS - 1-2
ER -