The leakage current of thick (up to 20 μm) a-Si:H p-i-n diodes developed for nuclear radiation detection were investigated. Performing current-voltage measurements at different temperatures and over a large electric field domain (up to 106 V/cm), different leakage current mechanisms, such as electron injection and field enhanced thermal generation, have been identified. The influence of the p layer thickness on the electronic injection was clearly demonstrated by means of spectral response experiments. The effect of a device forming procedure on the leakage current and on the noise power spectra of the devices has also been studied.
|Pages (from-to)||18 - 22|
|Number of pages||5|
|Journal||Nuclear Instruments and Methods in Physics Research Section A Accelerators Spectrometers Detectors and Associated Equipment|
|Publication status||Published - 1 Oct 1996|
Ilie, A., Equer, B., & Pochet, T. (1996). Leakage current studies of thick a-Si:H detectors under high electric field conditions. Nuclear Instruments and Methods in Physics Research Section A Accelerators Spectrometers Detectors and Associated Equipment, 380(1-2), 18 - 22. https://doi.org/10.1016/S0168-9002(96)00291-4