@article{dacd8f8370fb4d18b17687ce49fa5f31,
title = "Leakage current and charge trapping behavior in TiO2/SiO2 high-kappa gate dielectric stack on 4H-SIC substrate",
author = "R Mahapatra and Chakraborty, \{A K\} and N Poolamai and A Horsfall and S Chattopadhyay and Wright, \{N G\} and Coleman, \{K S\} and Coleman, \{P G\} and Burrows, \{C P\}",
note = "ID number: ISI:000244512400041",
year = "2007",
language = "English",
volume = "25 Jan-Feb",
pages = "217--223",
journal = "Journal of Vacuum Science \& Technology B",
issn = "1071-1023",
publisher = "AVS Science and Technology Society",
number = "1",
}