Leakage current and charge trapping behavior in TiO2/SiO2 high-kappa gate dielectric stack on 4H-SIC substrate

R Mahapatra, A K Chakraborty, N Poolamai, A Horsfall, S Chattopadhyay, N G Wright, K S Coleman, P G Coleman, C P Burrows

Research output: Contribution to journalArticle

50 Citations (Scopus)
Original languageEnglish
Pages (from-to)217-223
Number of pages7
JournalJournal of Vacuum Science & Technology B
Volume25 Jan-Feb
Issue number1
Publication statusPublished - 2007

Cite this

Mahapatra, R., Chakraborty, A. K., Poolamai, N., Horsfall, A., Chattopadhyay, S., Wright, N. G., Coleman, K. S., Coleman, P. G., & Burrows, C. P. (2007). Leakage current and charge trapping behavior in TiO2/SiO2 high-kappa gate dielectric stack on 4H-SIC substrate. Journal of Vacuum Science & Technology B, 25 Jan-Feb(1), 217-223.