Leakage current and charge trapping behavior in TiO2/SiO2 high-kappa gate dielectric stack on 4H-SIC substrate

R Mahapatra, A K Chakraborty, N Poolamai, A Horsfall, S Chattopadhyay, N G Wright, K S Coleman, P G Coleman, C P Burrows

Research output: Contribution to journalArticle

50 Citations (Scopus)
Original languageEnglish
Pages (from-to)217-223
Number of pages7
JournalJournal of Vacuum Science & Technology B
Volume25 Jan-Feb
Issue number1
Publication statusPublished - 2007

Cite this

Mahapatra, R., Chakraborty, A. K., Poolamai, N., Horsfall, A., Chattopadhyay, S., Wright, N. G., ... Burrows, C. P. (2007). Leakage current and charge trapping behavior in TiO2/SiO2 high-kappa gate dielectric stack on 4H-SIC substrate. Journal of Vacuum Science & Technology B, 25 Jan-Feb(1), 217-223.

Leakage current and charge trapping behavior in TiO2/SiO2 high-kappa gate dielectric stack on 4H-SIC substrate. / Mahapatra, R; Chakraborty, A K; Poolamai, N; Horsfall, A; Chattopadhyay, S; Wright, N G; Coleman, K S; Coleman, P G; Burrows, C P.

In: Journal of Vacuum Science & Technology B, Vol. 25 Jan-Feb, No. 1, 2007, p. 217-223.

Research output: Contribution to journalArticle

Mahapatra, R, Chakraborty, AK, Poolamai, N, Horsfall, A, Chattopadhyay, S, Wright, NG, Coleman, KS, Coleman, PG & Burrows, CP 2007, 'Leakage current and charge trapping behavior in TiO2/SiO2 high-kappa gate dielectric stack on 4H-SIC substrate', Journal of Vacuum Science & Technology B, vol. 25 Jan-Feb, no. 1, pp. 217-223.
Mahapatra R, Chakraborty AK, Poolamai N, Horsfall A, Chattopadhyay S, Wright NG et al. Leakage current and charge trapping behavior in TiO2/SiO2 high-kappa gate dielectric stack on 4H-SIC substrate. Journal of Vacuum Science & Technology B. 2007;25 Jan-Feb(1):217-223.
Mahapatra, R ; Chakraborty, A K ; Poolamai, N ; Horsfall, A ; Chattopadhyay, S ; Wright, N G ; Coleman, K S ; Coleman, P G ; Burrows, C P. / Leakage current and charge trapping behavior in TiO2/SiO2 high-kappa gate dielectric stack on 4H-SIC substrate. In: Journal of Vacuum Science & Technology B. 2007 ; Vol. 25 Jan-Feb, No. 1. pp. 217-223.
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