Leakage current and charge trapping behavior in TiO2/SiO2 high-kappa gate dielectric stack on 4H-SIC substrate

R Mahapatra; A K Chakraborty; N Poolamai; A Horsfall; S Chattopadhyay; N G Wright; K S Coleman; P G Coleman; C P Burrows

Leakage current and charge trapping behavior in TiO2/SiO2 high-kappa gate dielectric stack on 4H-SIC substrate

R Mahapatra, A K Chakraborty, N Poolamai, A Horsfall, S Chattopadhyay, N G Wright, K S Coleman, P G Coleman, C P Burrows

Department of Physics

Research output: Contribution to journal › Article › peer-review

60 Citations (SciVal)

Original language	English
Pages (from-to)	217-223
Number of pages	7
Journal	Journal of Vacuum Science & Technology B
Volume	25 Jan-Feb
Issue number	1
Publication status	Published - 2007

Bibliographical note

ID number: ISI:000244512400041

Cite this

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title = "Leakage current and charge trapping behavior in TiO2/SiO2 high-kappa gate dielectric stack on 4H-SIC substrate",

author = "R Mahapatra and Chakraborty, {A K} and N Poolamai and A Horsfall and S Chattopadhyay and Wright, {N G} and Coleman, {K S} and Coleman, {P G} and Burrows, {C P}",

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T1 - Leakage current and charge trapping behavior in TiO2/SiO2 high-kappa gate dielectric stack on 4H-SIC substrate

AU - Mahapatra, R

AU - Chakraborty, A K

AU - Poolamai, N

AU - Horsfall, A

AU - Chattopadhyay, S

AU - Wright, N G

AU - Coleman, K S

AU - Coleman, P G

AU - Burrows, C P

N1 - ID number: ISI:000244512400041

PY - 2007

Y1 - 2007

M3 - Article

SN - 1071-1023

VL - 25 Jan-Feb

SP - 217

EP - 223

JO - Journal of Vacuum Science & Technology B

JF - Journal of Vacuum Science & Technology B

IS - 1

ER -