Leakage current and charge trapping behavior in TiO2/SiO2 high-kappa gate dielectric stack on 4H-SIC substrate

R Mahapatra, A K Chakraborty, N Poolamai, A Horsfall, S Chattopadhyay, N G Wright, K S Coleman, P G Coleman, C P Burrows

Research output: Contribution to journalArticlepeer-review

58 Citations (SciVal)
Original languageEnglish
Pages (from-to)217-223
Number of pages7
JournalJournal of Vacuum Science & Technology B
Volume25 Jan-Feb
Issue number1
Publication statusPublished - 2007

Bibliographical note

ID number: ISI:000244512400041

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