Lattice Dynamics of the Rhenium and Technetium Dichalcogenides

Daniel Wolverson, Lewis Hart

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Abstract

The rhenium and technetium dichalcogenides are layered van der Waals semiconductors which show a large number of Raman-active zone-centre phonon modes as a result of their unusually large unit cells and deviation from hexagonal symmetry. They thus offer the possibility of introducing in-plane anisotropy into composite heterostructures based on van der Waals materials, and Raman spectroscopy is generally used to determine their in-plane orientation. We show that first-principles calculations give a good description of the lattice dynamics of this family of materials and thus predict the zone-centre phonon frequencies and Raman activities of TcS2. We consider the distribution of the phonon modes in frequency and their atomic displacements and give a unified understanding of the phonon frequencies and Raman spectra of ReS2, TcS2 and ReSe2 in terms of the scaling of Raman frequency with the chalcogen mass.
Original languageEnglish
Article number250
Number of pages6
JournalNanoscale Research Letters
Volume11
DOIs
Publication statusPublished - 13 May 2016

Fingerprint

Rhenium
Technetium
technetium
Lattice vibrations
rhenium
Chalcogens
Raman spectroscopy
Heterojunctions
Raman scattering
Anisotropy
Semiconductor materials
Composite materials
Raman spectra
deviation
scaling
anisotropy
composite materials
symmetry
cells
rhenium sulfide

Keywords

  • Rhenium sulphide
  • Technetium sulphide
  • Rhenium selenide
  • Transition metal dichalcogenide
  • Raman spectroscopy

Cite this

Lattice Dynamics of the Rhenium and Technetium Dichalcogenides. / Wolverson, Daniel; Hart, Lewis.

In: Nanoscale Research Letters, Vol. 11, 250, 13.05.2016.

Research output: Contribution to journalArticle

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