Large-area uniform graphene-like thin films grown by chemical vapor deposition directly on silicon nitride

Large-area uniform carbon films with graphene-like properties are synthesized by chemical vapor deposition directly on Si₃ N ₄ /Si at 1000°C without metal catalysts. The as deposited films are atomically thin and wrinkle- and pinhole-free. The film thickness can be controlled by modifying the growth conditions. Raman spectroscopy confirms the s p² graphitic structures. The films show ohmic behavior with a sheet resistance of ∼2.3-10.5 k/ at room temperature. An electric field effect of ∼2-10% (V_G =-20 V) is observed. The growth is explained by the self-assembly of carbon clusters from hydrocarbon pyrolysis. The scalable and transfer-free technique favors the application of graphene as transparent electrodes.