Large-area uniform graphene-like thin films grown by chemical vapor deposition directly on silicon nitride

Jie Sun, Niclas Lindvall, Matthew Cole, Kenneth B.K. Teo, August Yurgens

Research output: Contribution to journalArticle

76 Citations (Scopus)

Abstract

Large-area uniform carbon films with graphene-like properties are synthesized by chemical vapor deposition directly on Si3 N 4 /Si at 1000°C without metal catalysts. The as deposited films are atomically thin and wrinkle- and pinhole-free. The film thickness can be controlled by modifying the growth conditions. Raman spectroscopy confirms the s p2 graphitic structures. The films show ohmic behavior with a sheet resistance of ∼2.3-10.5 k/ at room temperature. An electric field effect of ∼2-10% (VG =-20 V) is observed. The growth is explained by the self-assembly of carbon clusters from hydrocarbon pyrolysis. The scalable and transfer-free technique favors the application of graphene as transparent electrodes.

Original languageEnglish
Article number252107
JournalApplied Physics Letters
Volume98
Issue number25
DOIs
Publication statusPublished - 20 Jun 2011

Fingerprint

silicon nitrides
graphene
vapor deposition
thin films
carbon
pinholes
pyrolysis
self assembly
film thickness
Raman spectroscopy
hydrocarbons
catalysts
electrodes
electric fields
room temperature
metals

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Large-area uniform graphene-like thin films grown by chemical vapor deposition directly on silicon nitride. / Sun, Jie; Lindvall, Niclas; Cole, Matthew; Teo, Kenneth B.K.; Yurgens, August.

In: Applied Physics Letters, Vol. 98, No. 25, 252107, 20.06.2011.

Research output: Contribution to journalArticle

Sun, Jie ; Lindvall, Niclas ; Cole, Matthew ; Teo, Kenneth B.K. ; Yurgens, August. / Large-area uniform graphene-like thin films grown by chemical vapor deposition directly on silicon nitride. In: Applied Physics Letters. 2011 ; Vol. 98, No. 25.
@article{e6fdcf8fec5b41d984e9146bbbf15e30,
title = "Large-area uniform graphene-like thin films grown by chemical vapor deposition directly on silicon nitride",
abstract = "Large-area uniform carbon films with graphene-like properties are synthesized by chemical vapor deposition directly on Si3 N 4 /Si at 1000°C without metal catalysts. The as deposited films are atomically thin and wrinkle- and pinhole-free. The film thickness can be controlled by modifying the growth conditions. Raman spectroscopy confirms the s p2 graphitic structures. The films show ohmic behavior with a sheet resistance of ∼2.3-10.5 k/ at room temperature. An electric field effect of ∼2-10{\%} (VG =-20 V) is observed. The growth is explained by the self-assembly of carbon clusters from hydrocarbon pyrolysis. The scalable and transfer-free technique favors the application of graphene as transparent electrodes.",
author = "Jie Sun and Niclas Lindvall and Matthew Cole and Teo, {Kenneth B.K.} and August Yurgens",
year = "2011",
month = "6",
day = "20",
doi = "10.1063/1.3602921",
language = "English",
volume = "98",
journal = "Applied Physics Letters",
issn = "0003-6951",
publisher = "AIP Publishing",
number = "25",

}

TY - JOUR

T1 - Large-area uniform graphene-like thin films grown by chemical vapor deposition directly on silicon nitride

AU - Sun, Jie

AU - Lindvall, Niclas

AU - Cole, Matthew

AU - Teo, Kenneth B.K.

AU - Yurgens, August

PY - 2011/6/20

Y1 - 2011/6/20

N2 - Large-area uniform carbon films with graphene-like properties are synthesized by chemical vapor deposition directly on Si3 N 4 /Si at 1000°C without metal catalysts. The as deposited films are atomically thin and wrinkle- and pinhole-free. The film thickness can be controlled by modifying the growth conditions. Raman spectroscopy confirms the s p2 graphitic structures. The films show ohmic behavior with a sheet resistance of ∼2.3-10.5 k/ at room temperature. An electric field effect of ∼2-10% (VG =-20 V) is observed. The growth is explained by the self-assembly of carbon clusters from hydrocarbon pyrolysis. The scalable and transfer-free technique favors the application of graphene as transparent electrodes.

AB - Large-area uniform carbon films with graphene-like properties are synthesized by chemical vapor deposition directly on Si3 N 4 /Si at 1000°C without metal catalysts. The as deposited films are atomically thin and wrinkle- and pinhole-free. The film thickness can be controlled by modifying the growth conditions. Raman spectroscopy confirms the s p2 graphitic structures. The films show ohmic behavior with a sheet resistance of ∼2.3-10.5 k/ at room temperature. An electric field effect of ∼2-10% (VG =-20 V) is observed. The growth is explained by the self-assembly of carbon clusters from hydrocarbon pyrolysis. The scalable and transfer-free technique favors the application of graphene as transparent electrodes.

UR - http://www.scopus.com/inward/record.url?scp=79959625948&partnerID=8YFLogxK

U2 - 10.1063/1.3602921

DO - 10.1063/1.3602921

M3 - Article

VL - 98

JO - Applied Physics Letters

JF - Applied Physics Letters

SN - 0003-6951

IS - 25

M1 - 252107

ER -