Large-area uniform carbon films with graphene-like properties are synthesized by chemical vapor deposition directly on Si3 N 4 /Si at 1000°C without metal catalysts. The as deposited films are atomically thin and wrinkle- and pinhole-free. The film thickness can be controlled by modifying the growth conditions. Raman spectroscopy confirms the s p2 graphitic structures. The films show ohmic behavior with a sheet resistance of ∼2.3-10.5 k/ at room temperature. An electric field effect of ∼2-10% (VG =-20 V) is observed. The growth is explained by the self-assembly of carbon clusters from hydrocarbon pyrolysis. The scalable and transfer-free technique favors the application of graphene as transparent electrodes.
|Journal||Applied Physics Letters|
|Publication status||Published - 20 Jun 2011|
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)