We review the effect of uniaxial strain on the low-energy electronic dispersion and Landau level structure of bilayer graphene. Based on the tight-binding approach, we derive a strain-induced term in the low-energy Hamiltonian and show how strain affects the low-energy electronic band structure. Depending on the magnitude and direction of applied strain, we identify three regimes of qualitatively different electronic dispersions. We also show that in a weak magnetic field, sufficient strain results in the filling factor ν=±4 being the most stable in the quantum Hall effect measurement, instead of ν=±8 in unperturbed bilayer at a weak magnetic field. To mention, in one of the strain regimes, the activation gap at ν=±4 is, down to very low fields, weakly dependent on the strength of the magnetic field.
Mucha-Kruczynski, M., Aleiner, I. L., & Fal'Ko, V. I. (2011). Landau levels in deformed bilayer graphene at low magnetic fields. Solid State Communications, 151(16), 1088-1093. https://doi.org/10.1016/j.ssc.2011.05.019