Landau level hybridization and the quantum Hall effect in InAs/(AlSb)/GaSb electron-hole systems

Kyoichi Suzuki, Kei Takashina, Sen Miyashita, Yoshiro Hirayama

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23 Citations (Scopus)

Abstract

The quantum Hall effect in electron-hole hybridized systems is examined using back-gated InAs/(AlSb)/GaSb heterostructures with different electron-hole coupling. When the electrons and holes are strongly coupled, it is found that quantized Hall states appear when the net filling factor [νnet=(n-p)h/eB, where n and p are the electron and hole densities, respectively] is an integer, and that it is not a necessary condition for independent electron and hole filling factors (νe=nh/eB and νh=ph/eB) to be integers simultaneously. The observed phenomena can be interpreted in terms of a simple model where the Landau-level fans associated with the electrons and holes hybridize resulting in an effective band gap at νnet=0, and the quantized Hall states occur according to the number of hybridized Landau levels occupied above this gap.
Original languageEnglish
Article number016803
Number of pages4
JournalPhysical Review Letters
Volume93
Issue number1
DOIs
Publication statusPublished - 2 Jul 2004

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