Landau level hybridization and the quantum Hall effect in InAs/(AlSb)/GaSb electron-hole systems

Kyoichi Suzuki, Kei Takashina, Sen Miyashita, Yoshiro Hirayama

Research output: Contribution to journalArticle

22 Citations (Scopus)

Abstract

The quantum Hall effect in electron-hole hybridized systems is examined using back-gated InAs/(AlSb)/GaSb heterostructures with different electron-hole coupling. When the electrons and holes are strongly coupled, it is found that quantized Hall states appear when the net filling factor [νnet=(n-p)h/eB, where n and p are the electron and hole densities, respectively] is an integer, and that it is not a necessary condition for independent electron and hole filling factors (νe=nh/eB and νh=ph/eB) to be integers simultaneously. The observed phenomena can be interpreted in terms of a simple model where the Landau-level fans associated with the electrons and holes hybridize resulting in an effective band gap at νnet=0, and the quantized Hall states occur according to the number of hybridized Landau levels occupied above this gap.
Original languageEnglish
Article number016803
Number of pages4
JournalPhysical Review Letters
Volume93
Issue number1
DOIs
Publication statusPublished - 2 Jul 2004

Fingerprint

quantum Hall effect
integers
electrons
fans

Cite this

Landau level hybridization and the quantum Hall effect in InAs/(AlSb)/GaSb electron-hole systems. / Suzuki, Kyoichi; Takashina, Kei; Miyashita, Sen; Hirayama, Yoshiro.

In: Physical Review Letters, Vol. 93, No. 1, 016803, 02.07.2004.

Research output: Contribution to journalArticle

@article{a60c332a143e404caf431ffe3615ffde,
title = "Landau level hybridization and the quantum Hall effect in InAs/(AlSb)/GaSb electron-hole systems",
abstract = "The quantum Hall effect in electron-hole hybridized systems is examined using back-gated InAs/(AlSb)/GaSb heterostructures with different electron-hole coupling. When the electrons and holes are strongly coupled, it is found that quantized Hall states appear when the net filling factor [νnet=(n-p)h/eB, where n and p are the electron and hole densities, respectively] is an integer, and that it is not a necessary condition for independent electron and hole filling factors (νe=nh/eB and νh=ph/eB) to be integers simultaneously. The observed phenomena can be interpreted in terms of a simple model where the Landau-level fans associated with the electrons and holes hybridize resulting in an effective band gap at νnet=0, and the quantized Hall states occur according to the number of hybridized Landau levels occupied above this gap.",
author = "Kyoichi Suzuki and Kei Takashina and Sen Miyashita and Yoshiro Hirayama",
year = "2004",
month = "7",
day = "2",
doi = "10.1103/PhysRevLett.93.016803",
language = "English",
volume = "93",
journal = "Physical Review Letters",
issn = "0031-9007",
publisher = "American Physical Society",
number = "1",

}

TY - JOUR

T1 - Landau level hybridization and the quantum Hall effect in InAs/(AlSb)/GaSb electron-hole systems

AU - Suzuki, Kyoichi

AU - Takashina, Kei

AU - Miyashita, Sen

AU - Hirayama, Yoshiro

PY - 2004/7/2

Y1 - 2004/7/2

N2 - The quantum Hall effect in electron-hole hybridized systems is examined using back-gated InAs/(AlSb)/GaSb heterostructures with different electron-hole coupling. When the electrons and holes are strongly coupled, it is found that quantized Hall states appear when the net filling factor [νnet=(n-p)h/eB, where n and p are the electron and hole densities, respectively] is an integer, and that it is not a necessary condition for independent electron and hole filling factors (νe=nh/eB and νh=ph/eB) to be integers simultaneously. The observed phenomena can be interpreted in terms of a simple model where the Landau-level fans associated with the electrons and holes hybridize resulting in an effective band gap at νnet=0, and the quantized Hall states occur according to the number of hybridized Landau levels occupied above this gap.

AB - The quantum Hall effect in electron-hole hybridized systems is examined using back-gated InAs/(AlSb)/GaSb heterostructures with different electron-hole coupling. When the electrons and holes are strongly coupled, it is found that quantized Hall states appear when the net filling factor [νnet=(n-p)h/eB, where n and p are the electron and hole densities, respectively] is an integer, and that it is not a necessary condition for independent electron and hole filling factors (νe=nh/eB and νh=ph/eB) to be integers simultaneously. The observed phenomena can be interpreted in terms of a simple model where the Landau-level fans associated with the electrons and holes hybridize resulting in an effective band gap at νnet=0, and the quantized Hall states occur according to the number of hybridized Landau levels occupied above this gap.

UR - http://dx.doi.org/10.1103/PhysRevLett.93.016803

U2 - 10.1103/PhysRevLett.93.016803

DO - 10.1103/PhysRevLett.93.016803

M3 - Article

VL - 93

JO - Physical Review Letters

JF - Physical Review Letters

SN - 0031-9007

IS - 1

M1 - 016803

ER -