Label-free detection of DNA hybridization with Au/SiO 2 /Si diodes and poly-Si TFTs

Pedro Estrela, Andrew G. Stewart, Piero Migliorato, Hiroshi Maeda

Research output: Chapter in Book/Report/Conference proceedingConference contribution

11 Citations (Scopus)

Abstract

Label-free electrical detection of DNA hybridization has been achieved by employing Au/SiO 2 /Si MOS diodes and Poly-Si TFTs. The detection is based on the modulation of the gate voltage associated with the increased negative charge on the gate upon hybridization. The method can be applied to other bio-reactions that result in a modification of surface dipoles.

Original languageEnglish
Title of host publicationIEDM Technical Digest. IEEE International Electron Devices Meeting
PublisherIEEE
Pages1009-1012
Number of pages4
Volume2004
ISBN (Print)0-7803-8684-1
DOIs
Publication statusPublished - 25 Apr 2005
EventIEEE International Electron Devices Meeting, 2004 IEDM - San Francisco, CA, USA United States
Duration: 13 Dec 200415 Dec 2004

Publication series

NameTechnical Digest - International Electron Devices Meeting, IEDM
ISSN (Print)0163-1918

Conference

ConferenceIEEE International Electron Devices Meeting, 2004 IEDM
CountryUSA United States
CitySan Francisco, CA
Period13/12/0415/12/04

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

Cite this

Estrela, P., Stewart, A. G., Migliorato, P., & Maeda, H. (2005). Label-free detection of DNA hybridization with Au/SiO 2 /Si diodes and poly-Si TFTs. In IEDM Technical Digest. IEEE International Electron Devices Meeting (Vol. 2004, pp. 1009-1012). (Technical Digest - International Electron Devices Meeting, IEDM). IEEE. https://doi.org/10.1109/IEDM.2004.1419359