Label-free detection of DNA hybridization with Au/SiO 2 /Si diodes and poly-Si TFTs

Pedro Estrela, Andrew G. Stewart, Piero Migliorato, Hiroshi Maeda

Research output: Chapter in Book/Report/Conference proceedingConference contribution

11 Citations (Scopus)


Label-free electrical detection of DNA hybridization has been achieved by employing Au/SiO 2 /Si MOS diodes and Poly-Si TFTs. The detection is based on the modulation of the gate voltage associated with the increased negative charge on the gate upon hybridization. The method can be applied to other bio-reactions that result in a modification of surface dipoles.

Original languageEnglish
Title of host publicationIEDM Technical Digest. IEEE International Electron Devices Meeting
Number of pages4
ISBN (Print)0-7803-8684-1
Publication statusPublished - 25 Apr 2005
EventIEEE International Electron Devices Meeting, 2004 IEDM - San Francisco, CA, USA United States
Duration: 13 Dec 200415 Dec 2004

Publication series

NameTechnical Digest - International Electron Devices Meeting, IEDM
ISSN (Print)0163-1918


ConferenceIEEE International Electron Devices Meeting, 2004 IEDM
CountryUSA United States
CitySan Francisco, CA

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

Fingerprint Dive into the research topics of 'Label-free detection of DNA hybridization with Au/SiO <sub>2</sub> /Si diodes and poly-Si TFTs'. Together they form a unique fingerprint.

Cite this