Investigation on the gain-switching of GaInN MQW laser diodes

Claudio Marinelli; Igor Y. Khrushchev; Judy M. Rorison; Richard V. Penty; Ian H. White; Tetsuya Takeuchi; Hiroshi Amano; Isamu Akasaki; Yawara Kaneko; Satoshi Watanabe; Norihide Yamada; Ghulam Hasnain; Rick Schneider; S. Y. Wang; Mike R. Tan

Investigation on the gain-switching of GaInN MQW laser diodes

Claudio Marinelli, Igor Y. Khrushchev, Judy M. Rorison, Richard V. Penty, Ian H. White, Tetsuya Takeuchi, Hiroshi Amano, Isamu Akasaki, Yawara Kaneko, Satoshi Watanabe, Norihide Yamada, Ghulam Hasnain, Rick Schneider, S. Y. Wang, Mike R. Tan

University of Bristol

Research output: Contribution to journal › Conference article › peer-review

Abstract

A study of the gain-switching process in GaInN MQW laser diodes is reported. Single peak gain-switched optical pulses with pulse widths ≤40 ps and optical powers equal to 100 mW are observed when electrical pulses with duration of 800 ps are applied. Sub-nanosecond optical pulses with peak powers in excess of 450 mW are also obtained and degradation mechanisms are analyzed. The transient response characteristics of the laser diodes are studied in both the time and spectral domains.

Original language	English
Pages (from-to)	52-59
Number of pages	8
Journal	Proceedings of SPIE - The International Society for Optical Engineering
Volume	3938
Publication status	Published - 1 Jan 2000
Event	Light-Emitting Diodes: Research, Manufacturing, and Applications IV - San Jose, CA, USA Duration: 26 Jan 2000 → 27 Jan 2000

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Computer Science Applications
Applied Mathematics
Electrical and Electronic Engineering

Cite this

@article{e121568456b54746aedbff60ad2d5c59,

title = "Investigation on the gain-switching of GaInN MQW laser diodes",

abstract = "A study of the gain-switching process in GaInN MQW laser diodes is reported. Single peak gain-switched optical pulses with pulse widths ≤40 ps and optical powers equal to 100 mW are observed when electrical pulses with duration of 800 ps are applied. Sub-nanosecond optical pulses with peak powers in excess of 450 mW are also obtained and degradation mechanisms are analyzed. The transient response characteristics of the laser diodes are studied in both the time and spectral domains.",

author = "Claudio Marinelli and Khrushchev, {Igor Y.} and Rorison, {Judy M.} and Penty, {Richard V.} and White, {Ian H.} and Tetsuya Takeuchi and Hiroshi Amano and Isamu Akasaki and Yawara Kaneko and Satoshi Watanabe and Norihide Yamada and Ghulam Hasnain and Rick Schneider and Wang, {S. Y.} and Tan, {Mike R.}",

year = "2000",

month = jan,

day = "1",

language = "English",

volume = "3938",

pages = "52--59",

journal = "Proceedings of SPIE - The International Society for Optical Engineering",

issn = "0277-786X",

publisher = "SPIE",

note = "Light-Emitting Diodes: Research, Manufacturing, and Applications IV ; Conference date: 26-01-2000 Through 27-01-2000",

}

TY - JOUR

T1 - Investigation on the gain-switching of GaInN MQW laser diodes

AU - Marinelli, Claudio

AU - Khrushchev, Igor Y.

AU - Rorison, Judy M.

AU - Penty, Richard V.

AU - White, Ian H.

AU - Takeuchi, Tetsuya

AU - Amano, Hiroshi

AU - Akasaki, Isamu

AU - Kaneko, Yawara

AU - Watanabe, Satoshi

AU - Yamada, Norihide

AU - Hasnain, Ghulam

AU - Schneider, Rick

AU - Wang, S. Y.

AU - Tan, Mike R.

PY - 2000/1/1

Y1 - 2000/1/1

N2 - A study of the gain-switching process in GaInN MQW laser diodes is reported. Single peak gain-switched optical pulses with pulse widths ≤40 ps and optical powers equal to 100 mW are observed when electrical pulses with duration of 800 ps are applied. Sub-nanosecond optical pulses with peak powers in excess of 450 mW are also obtained and degradation mechanisms are analyzed. The transient response characteristics of the laser diodes are studied in both the time and spectral domains.

AB - A study of the gain-switching process in GaInN MQW laser diodes is reported. Single peak gain-switched optical pulses with pulse widths ≤40 ps and optical powers equal to 100 mW are observed when electrical pulses with duration of 800 ps are applied. Sub-nanosecond optical pulses with peak powers in excess of 450 mW are also obtained and degradation mechanisms are analyzed. The transient response characteristics of the laser diodes are studied in both the time and spectral domains.

UR - http://www.scopus.com/inward/record.url?scp=0033746735&partnerID=8YFLogxK

M3 - Conference article

AN - SCOPUS:0033746735

SN - 0277-786X

VL - 3938

SP - 52

EP - 59

JO - Proceedings of SPIE - The International Society for Optical Engineering

JF - Proceedings of SPIE - The International Society for Optical Engineering

T2 - Light-Emitting Diodes: Research, Manufacturing, and Applications IV

Y2 - 26 January 2000 through 27 January 2000

ER -

Investigation on the gain-switching of GaInN MQW laser diodes

Abstract

ASJC Scopus subject areas

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