Investigation on power dissipation in the saturated iron-core superconducting fault current limiter

Boyang Shen, Chao Li, Jianzhao Geng, Qihuan Dong, Jun Ma, James Gawith, Kaihe Zhang, Jiabin Yang, Xinru Li, Zhen Huang, Tim A. Coombs

Research output: Contribution to journalArticlepeer-review

33 Citations (SciVal)


This paper presents the power dissipation analysis on saturated iron-core superconducting fault current limiter (SISFCL). The modeling of SISFCL together with its power dissipation computation on a high-temperature superconducting (HTS) coil was executed by the H-formulation model implemented into the finite element method (FEM) software package COMSOL. The model was based on the practical three-phase 35-kV/90-MVA SISFCL. The ac magnetic field in the crucial parts of SISFCL was studied to discover the origin of power loss on the HTS coil. The instantaneous power dissipations in the HTS coil with increasing dc bias current were computed and compared. Analysis proved that power dissipation in the HTS coil of SISFCL should be taken into account for the real operation.

Original languageEnglish
Article number5600305
JournalIEEE Transactions on Applied Superconductivity
Issue number2
Publication statusPublished - 16 Nov 2018

Bibliographical note

Funding Information:
Manuscript received August 11, 2018; accepted November 11, 2018. Date of publication November 16, 2018; date of current version December 11, 2018. This work was supported by in part by the China Scholarship Council and in part by the Cambridge Trust. (Corresponding author: Chao Li.) B. Shen, C. Li, J. Geng, Q. Dong, J. Ma, J. Gawith, J. Yang, X. Li, and T. A. Coombs are with the Electrical Engineering Division, Department of Engineering, University of Cambridge, Cambridge CB3 0FA, U.K. (e-mail:,cl644@

Publisher Copyright:
© 2002-2011 IEEE.


  • Ac loss
  • Finite element analysis
  • High-temperature superconducting (hts) coil
  • Power dissipation
  • Saturated iron-core superconducting fault current limiter (sisfcl)

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering


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