Capacitors with a high-k HfO2 film as gate dielectric were fabricated, using three different variations for the top gate electrode. This way it was possible to acquire important information on which kind of gate material should be used in combination with HfO2 as a gate insulator for optimum performance of possible low temperature applications, such as high-k TFTs. The variations of gate electrode were e-gun evaporated Al, sputtered W and CVD polysilicon followed by ion implantation and annealing. The capacitors were then characterized with capacitance-voltage measurements and current-voltage measurements.
|Number of pages||4|
|Journal||Physica Status Solidi (C) Current Topics in Solid State Physics|
|Publication status||Published - 2008|
ASJC Scopus subject areas
- Condensed Matter Physics