Investigation of top gate electrode options for high-k gate dielectric MOS capacitors

D. C. Moschou, E. Verrelli, D. N. Kouvatsos, P. Normand, D. Tsoukalas, A. Speliotis, P. Bayiati, D. Niarchos

Research output: Contribution to journalArticlepeer-review

Abstract

Capacitors with a high-k HfO2 film as gate dielectric were fabricated, using three different variations for the top gate electrode. This way it was possible to acquire important information on which kind of gate material should be used in combination with HfO2 as a gate insulator for optimum performance of possible low temperature applications, such as high-k TFTs. The variations of gate electrode were e-gun evaporated Al, sputtered W and CVD polysilicon followed by ion implantation and annealing. The capacitors were then characterized with capacitance-voltage measurements and current-voltage measurements.

Original languageEnglish
Pages (from-to)3626-3629
Number of pages4
JournalPhysica Status Solidi (C) Current Topics in Solid State Physics
Volume5
Issue number12
DOIs
Publication statusPublished - 2008

ASJC Scopus subject areas

  • Condensed Matter Physics

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