TY - JOUR
T1 - Investigation of top gate electrode options for high-k gate dielectric MOS capacitors
AU - Moschou, D. C.
AU - Verrelli, E.
AU - Kouvatsos, D. N.
AU - Normand, P.
AU - Tsoukalas, D.
AU - Speliotis, A.
AU - Bayiati, P.
AU - Niarchos, D.
PY - 2008
Y1 - 2008
N2 - Capacitors with a high-k HfO2 film as gate dielectric were fabricated, using three different variations for the top gate electrode. This way it was possible to acquire important information on which kind of gate material should be used in combination with HfO2 as a gate insulator for optimum performance of possible low temperature applications, such as high-k TFTs. The variations of gate electrode were e-gun evaporated Al, sputtered W and CVD polysilicon followed by ion implantation and annealing. The capacitors were then characterized with capacitance-voltage measurements and current-voltage measurements.
AB - Capacitors with a high-k HfO2 film as gate dielectric were fabricated, using three different variations for the top gate electrode. This way it was possible to acquire important information on which kind of gate material should be used in combination with HfO2 as a gate insulator for optimum performance of possible low temperature applications, such as high-k TFTs. The variations of gate electrode were e-gun evaporated Al, sputtered W and CVD polysilicon followed by ion implantation and annealing. The capacitors were then characterized with capacitance-voltage measurements and current-voltage measurements.
UR - http://www.scopus.com/inward/record.url?scp=57349140317&partnerID=8YFLogxK
UR - https://doi.org/10.1002/pssc.200780147
U2 - 10.1002/pssc.200780147
DO - 10.1002/pssc.200780147
M3 - Article
AN - SCOPUS:57349140317
SN - 1862-6351
VL - 5
SP - 3626
EP - 3629
JO - Physica Status Solidi (C) Current Topics in Solid State Physics
JF - Physica Status Solidi (C) Current Topics in Solid State Physics
IS - 12
ER -