Projects per year
Abstract
This paper describes the effect of an interfacial biaxial stress field on the dislocation formation dynamics during epitaxial growth of nitrides on Si(110). The anisotropic mismatch stress between a 2-fold symmetry Si(110) atomic plane and the AlN basal plane of 6-fold symmetry may be relaxed through the creation of additional characteristic dislocations, as proposed by Ruiz-Zepeda et al. with Burgers vectors: b= 1/2[2110] and b= [1210], ±60° from [1120]. The dislocations generated under such a biaxial stress field appear annihilating more efficiently with increasing thickness, leading to high-quality nitride epilayers on Si(110) for improved quantum efficiency of InGaN/GaN quantum wells.
Original language | English |
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Article number | 08JB24 |
Number of pages | 4 |
Journal | Japanese Journal of Applied Physics |
Volume | 52 |
Issue number | 8 PART2 |
Early online date | 20 Jun 2013 |
DOIs | |
Publication status | Published - Aug 2013 |
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Dive into the research topics of 'Investigation of strain-relaxation characteristics of nitrides grown on Si(110) by metalorganic chemical vapor deposition using X-ray diffraction'. Together they form a unique fingerprint.Projects
- 1 Finished
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Thermal Substrate: Novel High Thermal Conductivity Substrates for GaN Electronics: Thermal Innovation
Allsopp, D. (PI) & Wang, W. (CoI)
Engineering and Physical Sciences Research Council
1/05/13 → 31/10/16
Project: Research council
Equipment
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MC2- X-ray diffraction (XRD)
Material and Chemical Characterisation (MC2)Facility/equipment: Technology type