Investigation of strain-relaxation characteristics of nitrides grown on Si(110) by metalorganic chemical vapor deposition using X-ray diffraction

Quanzhong Jiang, Christopher J. Lewins, Duncan W. E. Allsopp, Chris R. Bowen, Wang N. Wang

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1 Citation (SciVal)

Abstract

This paper describes the effect of an interfacial biaxial stress field on the dislocation formation dynamics during epitaxial growth of nitrides on Si(110). The anisotropic mismatch stress between a 2-fold symmetry Si(110) atomic plane and the AlN basal plane of 6-fold symmetry may be relaxed through the creation of additional characteristic dislocations, as proposed by Ruiz-Zepeda et al. with Burgers vectors: b= 1/2[2110] and b= [1210], ±60° from [1120]. The dislocations generated under such a biaxial stress field appear annihilating more efficiently with increasing thickness, leading to high-quality nitride epilayers on Si(110) for improved quantum efficiency of InGaN/GaN quantum wells.
Original languageEnglish
Article number08JB24
Number of pages4
JournalJapanese Journal of Applied Physics
Volume52
Issue number8 PART2
Early online date20 Jun 2013
DOIs
Publication statusPublished - Aug 2013

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