Abstract
| Original language | English |
|---|---|
| Article number | 08JB24 |
| Number of pages | 4 |
| Journal | Japanese Journal of Applied Physics |
| Volume | 52 |
| Issue number | 8 PART2 |
| Early online date | 20 Jun 2013 |
| DOIs | |
| Publication status | Published - Aug 2013 |
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Investigation of strain-relaxation characteristics of nitrides grown on Si(110) by metalorganic chemical vapor deposition using X-ray diffraction. / Jiang, Quanzhong; Lewins, Christopher J.; Allsopp, Duncan W. E.; Bowen, Chris R.; Wang, Wang N.
In: Japanese Journal of Applied Physics, Vol. 52, No. 8 PART2, 08JB24, 08.2013.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - Investigation of strain-relaxation characteristics of nitrides grown on Si(110) by metalorganic chemical vapor deposition using X-ray diffraction
AU - Jiang, Quanzhong
AU - Lewins, Christopher J.
AU - Allsopp, Duncan W. E.
AU - Bowen, Chris R.
AU - Wang, Wang N.
PY - 2013/8
Y1 - 2013/8
N2 - This paper describes the effect of an interfacial biaxial stress field on the dislocation formation dynamics during epitaxial growth of nitrides on Si(110). The anisotropic mismatch stress between a 2-fold symmetry Si(110) atomic plane and the AlN basal plane of 6-fold symmetry may be relaxed through the creation of additional characteristic dislocations, as proposed by Ruiz-Zepeda et al. with Burgers vectors: b= 1/2[2110] and b= [1210], ±60° from [1120]. The dislocations generated under such a biaxial stress field appear annihilating more efficiently with increasing thickness, leading to high-quality nitride epilayers on Si(110) for improved quantum efficiency of InGaN/GaN quantum wells.
AB - This paper describes the effect of an interfacial biaxial stress field on the dislocation formation dynamics during epitaxial growth of nitrides on Si(110). The anisotropic mismatch stress between a 2-fold symmetry Si(110) atomic plane and the AlN basal plane of 6-fold symmetry may be relaxed through the creation of additional characteristic dislocations, as proposed by Ruiz-Zepeda et al. with Burgers vectors: b= 1/2[2110] and b= [1210], ±60° from [1120]. The dislocations generated under such a biaxial stress field appear annihilating more efficiently with increasing thickness, leading to high-quality nitride epilayers on Si(110) for improved quantum efficiency of InGaN/GaN quantum wells.
UR - http://www.scopus.com/inward/record.url?scp=84883169676&partnerID=8YFLogxK
UR - http://dx.doi.org/10.7567/JJAP.52.08JB24
U2 - 10.7567/JJAP.52.08JB24
DO - 10.7567/JJAP.52.08JB24
M3 - Article
VL - 52
JO - Japanese Journal of Applied Physics
JF - Japanese Journal of Applied Physics
SN - 0021-4922
IS - 8 PART2
M1 - 08JB24
ER -