Projects per year
This paper describes the effect of an interfacial biaxial stress field on the dislocation formation dynamics during epitaxial growth of nitrides on Si(110). The anisotropic mismatch stress between a 2-fold symmetry Si(110) atomic plane and the AlN basal plane of 6-fold symmetry may be relaxed through the creation of additional characteristic dislocations, as proposed by Ruiz-Zepeda et al. with Burgers vectors: b= 1/2 and b= , ±60° from . The dislocations generated under such a biaxial stress field appear annihilating more efficiently with increasing thickness, leading to high-quality nitride epilayers on Si(110) for improved quantum efficiency of InGaN/GaN quantum wells.
Thermal Substrate: Novel High Thermal Conductivity Substrates for GaN Electronics: Thermal Innovation
Allsopp, D. & Wang, W.
1/05/13 → 31/10/16
Project: Research council
Jiang, Q., Lewins, C. J., Allsopp, D. W. E., Bowen, C. R., & Wang, W. N. (2013). Investigation of strain-relaxation characteristics of nitrides grown on Si(110) by metalorganic chemical vapor deposition using X-ray diffraction. Japanese Journal of Applied Physics, 52(8 PART2), [08JB24]. https://doi.org/10.7567/JJAP.52.08JB24