Investigation of strain-relaxation characteristics of nitrides grown on Si(110) by metalorganic chemical vapor deposition using X-ray diffraction

Quanzhong Jiang, Christopher J. Lewins, Duncan W. E. Allsopp, Chris R. Bowen, Wang N. Wang

Research output: Contribution to journalArticle

1 Citation (Scopus)

Abstract

This paper describes the effect of an interfacial biaxial stress field on the dislocation formation dynamics during epitaxial growth of nitrides on Si(110). The anisotropic mismatch stress between a 2-fold symmetry Si(110) atomic plane and the AlN basal plane of 6-fold symmetry may be relaxed through the creation of additional characteristic dislocations, as proposed by Ruiz-Zepeda et al. with Burgers vectors: b= 1/2[2110] and b= [1210], ±60° from [1120]. The dislocations generated under such a biaxial stress field appear annihilating more efficiently with increasing thickness, leading to high-quality nitride epilayers on Si(110) for improved quantum efficiency of InGaN/GaN quantum wells.
LanguageEnglish
Article number08JB24
Number of pages4
JournalJapanese Journal of Applied Physics
Volume52
Issue number8 PART2
Early online date20 Jun 2013
DOIs
StatusPublished - Aug 2013

Fingerprint

Strain relaxation
Metallorganic chemical vapor deposition
Nitrides
nitrides
metalorganic chemical vapor deposition
X ray diffraction
stress distribution
diffraction
Burgers vector
x rays
Epilayers
symmetry
Quantum efficiency
Dislocations (crystals)
Epitaxial growth
Semiconductor quantum wells
quantum efficiency
quantum wells

Cite this

Investigation of strain-relaxation characteristics of nitrides grown on Si(110) by metalorganic chemical vapor deposition using X-ray diffraction. / Jiang, Quanzhong; Lewins, Christopher J.; Allsopp, Duncan W. E.; Bowen, Chris R.; Wang, Wang N.

In: Japanese Journal of Applied Physics, Vol. 52, No. 8 PART2, 08JB24, 08.2013.

Research output: Contribution to journalArticle

@article{bd692d89f9f64df18811137f64777eba,
title = "Investigation of strain-relaxation characteristics of nitrides grown on Si(110) by metalorganic chemical vapor deposition using X-ray diffraction",
abstract = "This paper describes the effect of an interfacial biaxial stress field on the dislocation formation dynamics during epitaxial growth of nitrides on Si(110). The anisotropic mismatch stress between a 2-fold symmetry Si(110) atomic plane and the AlN basal plane of 6-fold symmetry may be relaxed through the creation of additional characteristic dislocations, as proposed by Ruiz-Zepeda et al. with Burgers vectors: b= 1/2[2110] and b= [1210], ±60° from [1120]. The dislocations generated under such a biaxial stress field appear annihilating more efficiently with increasing thickness, leading to high-quality nitride epilayers on Si(110) for improved quantum efficiency of InGaN/GaN quantum wells.",
author = "Quanzhong Jiang and Lewins, {Christopher J.} and Allsopp, {Duncan W. E.} and Bowen, {Chris R.} and Wang, {Wang N.}",
year = "2013",
month = "8",
doi = "10.7567/JJAP.52.08JB24",
language = "English",
volume = "52",
journal = "Japanese Journal of Applied Physics",
issn = "0021-4922",
publisher = "Japan Society of Applied Physics",
number = "8 PART2",

}

TY - JOUR

T1 - Investigation of strain-relaxation characteristics of nitrides grown on Si(110) by metalorganic chemical vapor deposition using X-ray diffraction

AU - Jiang, Quanzhong

AU - Lewins, Christopher J.

AU - Allsopp, Duncan W. E.

AU - Bowen, Chris R.

AU - Wang, Wang N.

PY - 2013/8

Y1 - 2013/8

N2 - This paper describes the effect of an interfacial biaxial stress field on the dislocation formation dynamics during epitaxial growth of nitrides on Si(110). The anisotropic mismatch stress between a 2-fold symmetry Si(110) atomic plane and the AlN basal plane of 6-fold symmetry may be relaxed through the creation of additional characteristic dislocations, as proposed by Ruiz-Zepeda et al. with Burgers vectors: b= 1/2[2110] and b= [1210], ±60° from [1120]. The dislocations generated under such a biaxial stress field appear annihilating more efficiently with increasing thickness, leading to high-quality nitride epilayers on Si(110) for improved quantum efficiency of InGaN/GaN quantum wells.

AB - This paper describes the effect of an interfacial biaxial stress field on the dislocation formation dynamics during epitaxial growth of nitrides on Si(110). The anisotropic mismatch stress between a 2-fold symmetry Si(110) atomic plane and the AlN basal plane of 6-fold symmetry may be relaxed through the creation of additional characteristic dislocations, as proposed by Ruiz-Zepeda et al. with Burgers vectors: b= 1/2[2110] and b= [1210], ±60° from [1120]. The dislocations generated under such a biaxial stress field appear annihilating more efficiently with increasing thickness, leading to high-quality nitride epilayers on Si(110) for improved quantum efficiency of InGaN/GaN quantum wells.

UR - http://www.scopus.com/inward/record.url?scp=84883169676&partnerID=8YFLogxK

UR - http://dx.doi.org/10.7567/JJAP.52.08JB24

U2 - 10.7567/JJAP.52.08JB24

DO - 10.7567/JJAP.52.08JB24

M3 - Article

VL - 52

JO - Japanese Journal of Applied Physics

T2 - Japanese Journal of Applied Physics

JF - Japanese Journal of Applied Physics

SN - 0021-4922

IS - 8 PART2

M1 - 08JB24

ER -