@article{99b49e233fd343e7867445d202001d17,
title = "Intrinsic Layer Zn Doping Diffusion Control and Bandwidth Modulation of InP/InGaAs/InP Photodiode",
abstract = "In the InP/InGaAs/InP PIN photodetector material growth, zinc is a normal doping ion and it has a high diffusion coefficient in InP and InGaAs. The Zn diffusion depth at the p-InP and intrinsic InGaAs boundary is critical for PIN photodiode high frequency characteristics. We control the p-InP Zn doping diffusion into intrinsic InGaAs layer by reducing the growth temperature of the p-type InP, decreasing the Zn doping concentration of the InGaAs/InP boundary, and increasing the growth rate of p-InP. We derive the exact voltage-controlled PIN photodiode capacitance expressions as a function of the Zn diffusion depth in the InGaAs intrinsic layer. This work reveals that the RC bandwidth of p-doping diffusion photodiode capacitance can be controlled by reverse voltage. And it gives a novel reference to design photodiode and varactor in optical microwave mixed circuits. ",
keywords = "Diffusion processes, microwave photonics, photodiodes, varactor",
author = "Hongwei Liu and Xinwei Wang and Pingjuan Niu and Philip Shields and Zanyun Zhang and Xiaoyun Li and Chao Liu and Duxiang Wang",
note = "Funding Information: Manuscript received February 2, 2021; revised March 19, 2021; accepted April 6, 2021. Date of publication April 8, 2021; date of current version April 16, 2021. This work was supported in part by the National Nat- ural Science Foundation of China (NSFC) under Grant 61504093; in part by the Tianjin Science and Technology Commission (TSTC) under Grant 18JCYBJC85400, Grant 18ZXCLGX00090, and Grant 19JCTPJC48000; in part by the China Scholarship Council (CSC) under Grant 201809345004; and in part by the Tianjin Key Laboratory of Optoelectronic Detection Technology and System under Grant TD13-5035 and Grant 2017ZD06. (Corresponding author: Hongwei Liu.) Hongwei Liu, Xinwei Wang, Pingjuan Niu, Zanyun Zhang, and Xiaoyun Li are with the School of Electronics and Information Engineering, Tiangong University, Tianjin 300387, China, and also with the Tianjin Key Laboratory of Optoelectronic Detection Technology and System, Tiangong University, Tianjin 300387, China (e-mail: liuhongwei@tiangong.edu.cn). Philip Shields is with the Department of Electronic and Electrical Engineer- ing, University of Bath, Bath BA2 7AY, U.K. Chao Liu and Duxiang Wang are with Tianjin Sanan Optoelectronic Company Ltd., Tianjin 300392, China. Color versions of one or more figures in this letter are available at https://doi.org/10.1109/LPT.2021.3071873. Digital Object Identifier 10.1109/LPT.2021.3071873 1041-1135 {\textcopyright} 2021 IEEE. Personal use is permitted, but republication/redistribution requires IEEE permission. See https://www.ieee.org/publications/rights/index.html for more information. Publisher Copyright: {\textcopyright} 1989-2012 IEEE. Copyright: Copyright 2021 Elsevier B.V., All rights reserved.",
year = "2021",
month = may,
day = "15",
doi = "10.1109/LPT.2021.3071873",
language = "English",
volume = "33",
pages = "503--506",
journal = "IEEE Photonics Technology Letters",
issn = "1041-1135",
publisher = "IEEE",
number = "10",
}