Intrinsic Layer Zn Doping Diffusion Control and Bandwidth Modulation of InP/InGaAs/InP Photodiode

Hongwei Liu, Xinwei Wang, Pingjuan Niu, Philip Shields, Zanyun Zhang, Xiaoyun Li, Chao Liu, Duxiang Wang

Research output: Contribution to journalArticlepeer-review

Abstract

In the InP/InGaAs/InP PIN photodetector material growth, zinc is a normal doping ion and it has a high diffusion coefficient in InP and InGaAs. The Zn diffusion depth at the p-InP and intrinsic InGaAs boundary is critical for PIN photodiode high frequency characteristics. We control the p-InP Zn doping diffusion into intrinsic InGaAs layer by reducing the growth temperature of the p-type InP, decreasing the Zn doping concentration of the InGaAs/InP boundary, and increasing the growth rate of p-InP. We derive the exact voltage-controlled PIN photodiode capacitance expressions as a function of the Zn diffusion depth in the InGaAs intrinsic layer. This work reveals that the RC bandwidth of p-doping diffusion photodiode capacitance can be controlled by reverse voltage. And it gives a novel reference to design photodiode and varactor in optical microwave mixed circuits.

Original languageEnglish
Article number9399096
Pages (from-to)503-506
Number of pages4
JournalIEEE Photonics Technology Letters
Volume33
Issue number10
Early online date8 Apr 2021
DOIs
Publication statusPublished - 15 May 2021

Keywords

  • Diffusion processes
  • microwave photonics
  • photodiodes
  • varactor

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Electrical and Electronic Engineering

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