Abstract
In the InP/InGaAs/InP PIN photodetector material growth, zinc is a normal doping ion and it has a high diffusion coefficient in InP and InGaAs. The Zn diffusion depth at the p-InP and intrinsic InGaAs boundary is critical for PIN photodiode high frequency characteristics. We control the p-InP Zn doping diffusion into intrinsic InGaAs layer by reducing the growth temperature of the p-type InP, decreasing the Zn doping concentration of the InGaAs/InP boundary, and increasing the growth rate of p-InP. We derive the exact voltage-controlled PIN photodiode capacitance expressions as a function of the Zn diffusion depth in the InGaAs intrinsic layer. This work reveals that the RC bandwidth of p-doping diffusion photodiode capacitance can be controlled by reverse voltage. And it gives a novel reference to design photodiode and varactor in optical microwave mixed circuits.
| Original language | English |
|---|---|
| Article number | 9399096 |
| Pages (from-to) | 503-506 |
| Number of pages | 4 |
| Journal | IEEE Photonics Technology Letters |
| Volume | 33 |
| Issue number | 10 |
| Early online date | 8 Apr 2021 |
| DOIs | |
| Publication status | Published - 15 May 2021 |
Keywords
- Diffusion processes
- microwave photonics
- photodiodes
- varactor
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Atomic and Molecular Physics, and Optics
- Electrical and Electronic Engineering