Intersubband scattering in double-gate MOSFETs

Kei Takashina; Yukinori Ono; Akira Fujiwara; Yasuo Takahashi; Yoshiro Hirayama

doi:10.1109/TNANO.2006.880425

Intersubband scattering in double-gate MOSFETs

Kei Takashina, Yukinori Ono, Akira Fujiwara, Yasuo Takahashi, Yoshiro Hirayama

Department of Physics

Research output: Contribution to journal › Article › peer-review

11 Citations (SciVal)

Original language	English
Pages (from-to)	430-435
Journal	IEEE Transactions on Nanotechnology
Volume	5
Issue number	5
DOIs	https://doi.org/10.1109/TNANO.2006.880425
Publication status	Published - 11 Sept 2006

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10.1109/TNANO.2006.880425

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title = "Intersubband scattering in double-gate MOSFETs",

author = "Kei Takashina and Yukinori Ono and Akira Fujiwara and Yasuo Takahashi and Yoshiro Hirayama",

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AU - Takashina, Kei

AU - Ono, Yukinori

AU - Fujiwara, Akira

AU - Takahashi, Yasuo

AU - Hirayama, Yoshiro

PY - 2006/9/11

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EP - 435

JO - IEEE Transactions on Nanotechnology

JF - IEEE Transactions on Nanotechnology

IS - 5

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Intersubband scattering in double-gate MOSFETs

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