Intersubband scattering in double-gate MOSFETs

Kei Takashina; Yukinori Ono; Akira Fujiwara; Yasuo Takahashi; Yoshiro Hirayama

doi:10.1109/TNANO.2006.880425

Intersubband scattering in double-gate MOSFETs

Kei Takashina, Yukinori Ono, Akira Fujiwara, Yasuo Takahashi, Yoshiro Hirayama

Department of Physics

Research output: Contribution to journal › Article › peer-review

10 Citations (SciVal)

Original language	English
Pages (from-to)	430-435
Journal	IEEE Transactions on Nanotechnology
Volume	5
Issue number	5
DOIs	https://doi.org/10.1109/TNANO.2006.880425
Publication status	Published - 11 Sept 2006

Access to Document

10.1109/TNANO.2006.880425

Cite this

@article{05b4f5839adb47a284ee0dd7ea56bb5c,

title = "Intersubband scattering in double-gate MOSFETs",

author = "Kei Takashina and Yukinori Ono and Akira Fujiwara and Yasuo Takahashi and Yoshiro Hirayama",

year = "2006",

month = sep,

day = "11",

doi = "10.1109/TNANO.2006.880425",

language = "English",

volume = "5",

pages = "430--435",

journal = "IEEE Transactions on Nanotechnology",

issn = "1536-125X",

publisher = "IEEE",

number = "5",

}

TY - JOUR

T1 - Intersubband scattering in double-gate MOSFETs

AU - Takashina, Kei

AU - Ono, Yukinori

AU - Fujiwara, Akira

AU - Takahashi, Yasuo

AU - Hirayama, Yoshiro

PY - 2006/9/11

Y1 - 2006/9/11

UR - http://dx.doi.org/10.1109/TNANO.2006.880425

U2 - 10.1109/TNANO.2006.880425

DO - 10.1109/TNANO.2006.880425

M3 - Article

SN - 1536-125X

VL - 5

SP - 430

EP - 435

JO - IEEE Transactions on Nanotechnology

JF - IEEE Transactions on Nanotechnology

IS - 5

ER -

Intersubband scattering in double-gate MOSFETs

Access to Document

Other files and links

Cite this