Abstract
Solution-processed memory diodes based on phase separated blends of ferroelectric and semiconducting polymers in the low resistance on-state operate similar to a vertical field-effect transistor at the pinch-off. Numerical simulations have shown that the performance of the diode is dominated by the conduction of charge carriers at the interface between the semiconductor and ferroelectric phases. Here, we present an unambiguous experimental demonstration of the charge injection process in the diodes. We employ a modified diode structure, wherein the electrode in contact with the semiconductor phase has been intentionally removed. Even in the absence of an electrical contact with the semiconductor phase, the diode still shows resistance switching. We provide numerical simulations that reproduce the experimentally measured I-V characteristics and therefore confirm interfacial conduction in the diodes. Furthermore, we discuss the implications of the proposed memory structure particularly in the performance of light-emitting diodes with built-in memory functionality, i.e., MEMOLEDs.
Original language | English |
---|---|
Article number | 093302 |
Journal | Applied Physics Letters |
Volume | 113 |
Issue number | 9 |
DOIs | |
Publication status | Published - 27 Aug 2018 |
Funding
We thank C. Bauer, F. Keller, and H. Raich for their technical support. K.A. is grateful to the Alexander von Humboldt Foundation for the funding that is provided in the framework of the Sofja Kovalevskaja Award, endowed by the Federal Ministry of Education and Research, Germany.
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)