Integration of Individual Nanoscale Structures into Devices Using Dynamic Nanostenciling

S Egger; Adelina Ilie; S Machida; T Nakayama

doi:10.1109/INEC.2008.4585459

Integration of Individual Nanoscale Structures into Devices Using Dynamic Nanostenciling

S Egger, Adelina Ilie, S Machida, T Nakayama

Department of Physics

National Institute for Materials Science

Research output: Chapter or section in a book/report/conference proceeding › Chapter or section

Abstract

We succeeded in integrating individual, pre-existing nanostructures into functional devices using ultrahigh vacuum dynamic nanostenciling. Nanostructures are first located via atomic force microscopy (AFM), while device elements are added step by step, with an achieved positional accuracy of 20 nm. Electronic transport, potentiometry, and scanning Kelvin probe can be used for control at any fabrication stage.

Original language	English
Title of host publication	2nd IEEE International Nanoelectronics Conference, 2008. INEC 2008
Publisher	IEE
Pages	158 - 159
Number of pages	2
ISBN (Print)	9781424415724
DOIs	https://doi.org/10.1109/INEC.2008.4585459
Publication status	Published - 2008
Event	2nd IEEE International Nanoelectronics Conference, 2008 - Shanghai, China Duration: 24 Mar 2008 → 27 Mar 2008

Conference

Conference	2nd IEEE International Nanoelectronics Conference, 2008
Abbreviated title	INEC 2008
Country/Territory	China
City	Shanghai
Period	24/03/08 → 27/03/08

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10.1109/INEC.2008.4585459

Cite this

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title = "Integration of Individual Nanoscale Structures into Devices Using Dynamic Nanostenciling",

abstract = "We succeeded in integrating individual, pre-existing nanostructures into functional devices using ultrahigh vacuum dynamic nanostenciling. Nanostructures are first located via atomic force microscopy (AFM), while device elements are added step by step, with an achieved positional accuracy of 20 nm. Electronic transport, potentiometry, and scanning Kelvin probe can be used for control at any fabrication stage.",

author = "S Egger and Adelina Ilie and S Machida and T Nakayama",

year = "2008",

doi = "10.1109/INEC.2008.4585459",

language = "English",

isbn = "9781424415724",

pages = "158 -- 159",

booktitle = "2nd IEEE International Nanoelectronics Conference, 2008. INEC 2008",

publisher = "IEE",

note = "2nd IEEE International Nanoelectronics Conference, 2008, INEC 2008 ; Conference date: 24-03-2008 Through 27-03-2008",

}

TY - CHAP

T1 - Integration of Individual Nanoscale Structures into Devices Using Dynamic Nanostenciling

AU - Egger, S

AU - Ilie, Adelina

AU - Machida, S

AU - Nakayama, T

PY - 2008

Y1 - 2008

N2 - We succeeded in integrating individual, pre-existing nanostructures into functional devices using ultrahigh vacuum dynamic nanostenciling. Nanostructures are first located via atomic force microscopy (AFM), while device elements are added step by step, with an achieved positional accuracy of 20 nm. Electronic transport, potentiometry, and scanning Kelvin probe can be used for control at any fabrication stage.

AB - We succeeded in integrating individual, pre-existing nanostructures into functional devices using ultrahigh vacuum dynamic nanostenciling. Nanostructures are first located via atomic force microscopy (AFM), while device elements are added step by step, with an achieved positional accuracy of 20 nm. Electronic transport, potentiometry, and scanning Kelvin probe can be used for control at any fabrication stage.

UR - http://dx.doi.org/10.1109/INEC.2008.4585459

U2 - 10.1109/INEC.2008.4585459

DO - 10.1109/INEC.2008.4585459

M3 - Chapter or section

SN - 9781424415724

SP - 158

EP - 159

BT - 2nd IEEE International Nanoelectronics Conference, 2008. INEC 2008

PB - IEE

T2 - 2nd IEEE International Nanoelectronics Conference, 2008

Y2 - 24 March 2008 through 27 March 2008

ER -

Integration of Individual Nanoscale Structures into Devices Using Dynamic Nanostenciling

Abstract

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