Integrated Schottky structures for applications above 100 GHz

B Alderman, H Sanghera, B Thomas, D Matheson, A Maestrini, H Wang, J Treuttel, J V Siles, Steven R Davies, T Narhi

Research output: Chapter in Book/Report/Conference proceedingConference contribution

6 Citations (Scopus)

Abstract

Recent developments in the fabrication of GaAs integrated Schottky structures for applications above 100 GHz are presented. Two approaches are discussed; the fabrication of integrated circuits using a GaAs foundry service, coupled with the research based post-processing of these structures, and the fabrication of discrete and integrated Schottky structures using a bespoke research laboratory.
Original languageEnglish
Title of host publicationEuropean Microwave Integrated Circuit Conference: EuMIC 2008
PublisherIEEE
Pages202-205
Number of pages4
ISBN (Print)9782874870071
DOIs
Publication statusPublished - Oct 2008
Event38th European Microwave Conference - Amsterdam
Duration: 27 Oct 200831 Oct 2008

Conference

Conference38th European Microwave Conference
CityAmsterdam
Period27/10/0831/10/08

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  • Cite this

    Alderman, B., Sanghera, H., Thomas, B., Matheson, D., Maestrini, A., Wang, H., Treuttel, J., Siles, J. V., Davies, S. R., & Narhi, T. (2008). Integrated Schottky structures for applications above 100 GHz. In European Microwave Integrated Circuit Conference: EuMIC 2008 (pp. 202-205). IEEE. https://doi.org/10.1109/EMICC.2008.4772264