Integrated Schottky structures for applications above 100 GHz

B Alderman; H Sanghera; B Thomas; D Matheson; A Maestrini; H Wang; J Treuttel; J V Siles; Steven R Davies; T Narhi

doi:10.1109/EMICC.2008.4772264

Integrated Schottky structures for applications above 100 GHz

B Alderman, H Sanghera, B Thomas, D Matheson, A Maestrini, H Wang, J Treuttel, J V Siles, Steven R Davies, T Narhi

Department of Physics

Research output: Chapter or section in a book/report/conference proceeding › Chapter in a published conference proceeding

8 Citations (SciVal)

Abstract

Recent developments in the fabrication of GaAs integrated Schottky structures for applications above 100 GHz are presented. Two approaches are discussed; the fabrication of integrated circuits using a GaAs foundry service, coupled with the research based post-processing of these structures, and the fabrication of discrete and integrated Schottky structures using a bespoke research laboratory.

Original language	English
Title of host publication	European Microwave Integrated Circuit Conference: EuMIC 2008
Publisher	IEEE
Pages	202-205
Number of pages	4
ISBN (Print)	9782874870071
DOIs	https://doi.org/10.1109/EMICC.2008.4772264
Publication status	Published - Oct 2008
Event	38th European Microwave Conference - Amsterdam Duration: 27 Oct 2008 → 31 Oct 2008

Conference

Conference	38th European Microwave Conference
City	Amsterdam
Period	27/10/08 → 31/10/08

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10.1109/EMICC.2008.4772264

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Alderman, B, Sanghera, H, Thomas, B, Matheson, D, Maestrini, A, Wang, H, Treuttel, J, Siles, JV, Davies, SR & Narhi, T 2008, Integrated Schottky structures for applications above 100 GHz. in European Microwave Integrated Circuit Conference: EuMIC 2008. IEEE, pp. 202-205, 38th European Microwave Conference, Amsterdam, 27/10/08. https://doi.org/10.1109/EMICC.2008.4772264

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abstract = "Recent developments in the fabrication of GaAs integrated Schottky structures for applications above 100 GHz are presented. Two approaches are discussed; the fabrication of integrated circuits using a GaAs foundry service, coupled with the research based post-processing of these structures, and the fabrication of discrete and integrated Schottky structures using a bespoke research laboratory.",

author = "B Alderman and H Sanghera and B Thomas and D Matheson and A Maestrini and H Wang and J Treuttel and Siles, {J V} and Davies, {Steven R} and T Narhi",

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AU - Alderman, B

AU - Sanghera, H

AU - Thomas, B

AU - Matheson, D

AU - Maestrini, A

AU - Wang, H

AU - Treuttel, J

AU - Siles, J V

AU - Davies, Steven R

AU - Narhi, T

PY - 2008/10

Y1 - 2008/10

N2 - Recent developments in the fabrication of GaAs integrated Schottky structures for applications above 100 GHz are presented. Two approaches are discussed; the fabrication of integrated circuits using a GaAs foundry service, coupled with the research based post-processing of these structures, and the fabrication of discrete and integrated Schottky structures using a bespoke research laboratory.

AB - Recent developments in the fabrication of GaAs integrated Schottky structures for applications above 100 GHz are presented. Two approaches are discussed; the fabrication of integrated circuits using a GaAs foundry service, coupled with the research based post-processing of these structures, and the fabrication of discrete and integrated Schottky structures using a bespoke research laboratory.

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DO - 10.1109/EMICC.2008.4772264

M3 - Chapter in a published conference proceeding

SN - 9782874870071

SP - 202

EP - 205

BT - European Microwave Integrated Circuit Conference: EuMIC 2008

PB - IEEE

T2 - 38th European Microwave Conference

Y2 - 27 October 2008 through 31 October 2008

ER -

Integrated Schottky structures for applications above 100 GHz

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