Integrated passive wavelength athermalisation for vertical-cavity semiconductor laser diodes

A. E.W. Phillips, R. V. Penty, I. H. White

Research output: Contribution to journalArticle

6 Citations (Scopus)

Abstract

The ITU G.694.2 CWDM wavelength grid spacing is largely determined by an allowance for source wavelength drift. A method of reducing this is introduced by stabilising the optical length of a short semiconductor laser cavity, using the phase contribution of DBR reflectors to compensate the increase in its optical length with temperature. It is shown that it is necessary to adopt a VCSEL design incorporating optical polymers in air-gap DBRs. Giving consideration to the technical problems of such an approach, a design procedure is developed based on a TMM survey of the available DBR design space. An example design for a 1λ InP cavity is shown to reduce temperature drift of the design wavelength of 1320nm to -4.3pm/°C over the range 0-80°C.

Original languageEnglish
Pages (from-to)174-180
Number of pages7
JournalIEE Proceedings: Optoelectronics
Volume152
Issue number3
DOIs
Publication statusPublished - 1 Jun 2005

ASJC Scopus subject areas

  • Atomic and Molecular Physics, and Optics
  • Computer Networks and Communications
  • Electrical and Electronic Engineering

Cite this

Integrated passive wavelength athermalisation for vertical-cavity semiconductor laser diodes. / Phillips, A. E.W.; Penty, R. V.; White, I. H.

In: IEE Proceedings: Optoelectronics, Vol. 152, No. 3, 01.06.2005, p. 174-180.

Research output: Contribution to journalArticle

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