In this paper a novel design is proposed for a monolithically integrated laser diode structure suitable for multiwavelength optical transparent networks operating at 1.5 μm. Theoretical simulations indicate that output powers in excess of 10 mW can be generated by injection currents less than 150 mA and with a maximum side mode suppression ratio (SMSR) of better than 30 dB. Initial, non-optimised laser structures, incorporating an all active approach, have been fabricated for assessment purposes. These have shown successful lasing behaviour.
|Journal||IEE Colloquium (Digest)|
|Publication status||Published - 1 Jan 1994|
|Event||Electronics Division Colloquium on Transparent Optical Networks: Applications, Architectures and Technology - London, UK|
Duration: 22 Apr 1994 → 22 Apr 1994
ASJC Scopus subject areas
- Electrical and Electronic Engineering