Integrated circuits based on conjugated polymer monolayer

M. Li, D.K. Mangalore, Jingbo Zhao, J.H. Carpenter, Hongping Yan, H. Ade, He Yan, K. Müllen, P.W.M. Blom, W. Pisula, D.M. De Leeuw, K. Asadi

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Abstract

It is still a great challenge to fabricate conjugated polymer monolayer field-effect transistors (PoM-FETs) due to intricate crystallization and film formation of conjugated polymers. Here we demonstrate PoM-FETs based on a single monolayer of a conjugated polymer. The resulting PoM-FETs are highly reproducible and exhibit charge carrier mobilities reaching 3 cm2 V−1 s−1. The high performance is attributed to the strong interactions of the polymer chains present already in solution leading to pronounced edge-on packing and well-defined microstructure in the monolayer. The high reproducibility enables the integration of discrete unipolar PoM-FETs into inverters and ring oscillators. Real logic functionality has been demonstrated by constructing a 15-bit code generator in which hundreds of self-assembled PoM-FETs are addressed simultaneously. Our results provide the state-of-the-art example of integrated circuits based on a conjugated polymer monolayer, opening prospective pathways for bottom-up organic electronics.
Original languageEnglish
Article number451
JournalNature Communications
Volume9
DOIs
Publication statusPublished - 31 Jan 2018

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