InGaN Nanohole Arrays Coated by Lead Halide Perovskite Nanocrystals for Solid-State Lighting

Modestos Athanasiou; Paris Papagiorgis; Andreas Manoli; Caterina Bernasconi; Nicolas Poyiatzis; Pierre Marie Coulon; Philip Shields; Maryna I. Bodnarchuk; Maksym V. Kovalenko; Tao Wang; Grigorios Itskos

doi:10.1021/acsanm.9b02154

InGaN Nanohole Arrays Coated by Lead Halide Perovskite Nanocrystals for Solid-State Lighting

Modestos Athanasiou, Paris Papagiorgis, Andreas Manoli, Caterina Bernasconi, Nicolas Poyiatzis, Pierre Marie Coulon, Philip Shields, Maryna I. Bodnarchuk, Maksym V. Kovalenko, Tao Wang, Grigorios Itskos

Research output: Contribution to journal › Article › peer-review

9 Citations (SciVal)

Abstract

In this work, we demonstrate efficient light down-conversion via FRET in InGaN/GaN multiple quantum well (MQW) nanohole arrays, coated with green-emitting CsPbBr₃ and FAPbBr₃ nanocrystals (NCs) and near-infrared (IR) FAPbI₃ NC overlayers for solid-state lighting. Patterning the InGaN MQW into nanohole arrays allows a minimum nitride–NC separation while increasing the heterointerfacial area, thus improving simultaneously the nonradiative and radiative transfer efficiencies. Detailed spectroscopic studies of steady-state and time-resolved photoluminescence indicate a significant reduction in the quantum well photoluminescent decay time in the presence of NCs, accompanied by a significant concurrent increase of the NC integrated emission, providing evidence of efficient light down-conversion mediated by FRET with efficiencies as high as ∼83 ± 6% in the green and ∼74 ± 5% in the near-IR.

Original language	English
Pages (from-to)	2167-2175
Number of pages	9
Journal	ACS Applied Nano Materials
Volume	3
Issue number	3
Early online date	5 Feb 2020
DOIs	https://doi.org/10.1021/acsanm.9b02154
Publication status	Published - 27 Mar 2020

Bibliographical note

Funding Information:
This work was financially supported by the Research and Innovation Foundation of Cyprus, under the “New Strategic Infrastructure Units-Young Scientists” Program (Grant Agreement No. “INFRASTRUCTURES/1216/0004″, Acronym “NANOSONICS”) and partially supported by the EPSRC, UK via Grant No. EP/M015181/1, “Manufacturing nano-engineered III-nitrides”. M.A. acknowledges financial support by the University of Cyprus via the “Advanced Postdoctoral Research Fellowships 2018-2019” Program and by the European Union’s Horizon 2020 research and innovation programme under the Marie Skłodowska-Curie Grant Agreement No. 831690

Publisher Copyright:
Copyright © 2020 American Chemical Society

Funding

This work was financially supported by the Research and Innovation Foundation of Cyprus, under the “New Strategic Infrastructure Units-Young Scientists” Program (Grant Agreement No. “INFRASTRUCTURES/1216/0004″, Acronym “NANOSONICS”) and partially supported by the EPSRC, UK via Grant No. EP/M015181/1, “Manufacturing nano-engineered III-nitrides”. M.A. acknowledges financial support by the University of Cyprus via the “Advanced Postdoctoral Research Fellowships 2018-2019” Program and by the European Union’s Horizon 2020 research and innovation programme under the Marie Skłodowska-Curie Grant Agreement No. 831690

Keywords

down-conversion
InGaN/GaN
lead halide perovskites
nanocrystals
resonant energy transfer

ASJC Scopus subject areas

General Materials Science

Access to Document

10.1021/acsanm.9b02154

Cite this

@article{d4e16a13ca1a4e58b23f21a1ebbd0a55,

title = "InGaN Nanohole Arrays Coated by Lead Halide Perovskite Nanocrystals for Solid-State Lighting",

abstract = "In this work, we demonstrate efficient light down-conversion via FRET in InGaN/GaN multiple quantum well (MQW) nanohole arrays, coated with green-emitting CsPbBr3 and FAPbBr3 nanocrystals (NCs) and near-infrared (IR) FAPbI3 NC overlayers for solid-state lighting. Patterning the InGaN MQW into nanohole arrays allows a minimum nitride–NC separation while increasing the heterointerfacial area, thus improving simultaneously the nonradiative and radiative transfer efficiencies. Detailed spectroscopic studies of steady-state and time-resolved photoluminescence indicate a significant reduction in the quantum well photoluminescent decay time in the presence of NCs, accompanied by a significant concurrent increase of the NC integrated emission, providing evidence of efficient light down-conversion mediated by FRET with efficiencies as high as ∼83 ± 6\% in the green and ∼74 ± 5\% in the near-IR.",

keywords = "down-conversion, InGaN/GaN, lead halide perovskites, nanocrystals, resonant energy transfer",

author = "Modestos Athanasiou and Paris Papagiorgis and Andreas Manoli and Caterina Bernasconi and Nicolas Poyiatzis and Coulon, \{Pierre Marie\} and Philip Shields and Bodnarchuk, \{Maryna I.\} and Kovalenko, \{Maksym V.\} and Tao Wang and Grigorios Itskos",

note = "Funding Information: This work was financially supported by the Research and Innovation Foundation of Cyprus, under the “New Strategic Infrastructure Units-Young Scientists” Program (Grant Agreement No. “INFRASTRUCTURES/1216/0004″, Acronym “NANOSONICS”) and partially supported by the EPSRC, UK via Grant No. EP/M015181/1, “Manufacturing nano-engineered III-nitrides”. M.A. acknowledges financial support by the University of Cyprus via the “Advanced Postdoctoral Research Fellowships 2018-2019” Program and by the European Union{\textquoteright}s Horizon 2020 research and innovation programme under the Marie Sk{\l}odowska-Curie Grant Agreement No. 831690 Publisher Copyright: Copyright {\textcopyright} 2020 American Chemical Society",

year = "2020",

month = mar,

day = "27",

doi = "10.1021/acsanm.9b02154",

language = "English",

volume = "3",

pages = "2167--2175",

journal = "ACS Applied Nano Materials",

issn = "2574-0970",

publisher = "American Chemical Society",

number = "3",

}

TY - JOUR

T1 - InGaN Nanohole Arrays Coated by Lead Halide Perovskite Nanocrystals for Solid-State Lighting

AU - Athanasiou, Modestos

AU - Papagiorgis, Paris

AU - Manoli, Andreas

AU - Bernasconi, Caterina

AU - Poyiatzis, Nicolas

AU - Coulon, Pierre Marie

AU - Shields, Philip

AU - Bodnarchuk, Maryna I.

AU - Kovalenko, Maksym V.

AU - Wang, Tao

AU - Itskos, Grigorios

N1 - Funding Information: This work was financially supported by the Research and Innovation Foundation of Cyprus, under the “New Strategic Infrastructure Units-Young Scientists” Program (Grant Agreement No. “INFRASTRUCTURES/1216/0004″, Acronym “NANOSONICS”) and partially supported by the EPSRC, UK via Grant No. EP/M015181/1, “Manufacturing nano-engineered III-nitrides”. M.A. acknowledges financial support by the University of Cyprus via the “Advanced Postdoctoral Research Fellowships 2018-2019” Program and by the European Union’s Horizon 2020 research and innovation programme under the Marie Skłodowska-Curie Grant Agreement No. 831690 Publisher Copyright: Copyright © 2020 American Chemical Society

PY - 2020/3/27

Y1 - 2020/3/27

N2 - In this work, we demonstrate efficient light down-conversion via FRET in InGaN/GaN multiple quantum well (MQW) nanohole arrays, coated with green-emitting CsPbBr3 and FAPbBr3 nanocrystals (NCs) and near-infrared (IR) FAPbI3 NC overlayers for solid-state lighting. Patterning the InGaN MQW into nanohole arrays allows a minimum nitride–NC separation while increasing the heterointerfacial area, thus improving simultaneously the nonradiative and radiative transfer efficiencies. Detailed spectroscopic studies of steady-state and time-resolved photoluminescence indicate a significant reduction in the quantum well photoluminescent decay time in the presence of NCs, accompanied by a significant concurrent increase of the NC integrated emission, providing evidence of efficient light down-conversion mediated by FRET with efficiencies as high as ∼83 ± 6% in the green and ∼74 ± 5% in the near-IR.

AB - In this work, we demonstrate efficient light down-conversion via FRET in InGaN/GaN multiple quantum well (MQW) nanohole arrays, coated with green-emitting CsPbBr3 and FAPbBr3 nanocrystals (NCs) and near-infrared (IR) FAPbI3 NC overlayers for solid-state lighting. Patterning the InGaN MQW into nanohole arrays allows a minimum nitride–NC separation while increasing the heterointerfacial area, thus improving simultaneously the nonradiative and radiative transfer efficiencies. Detailed spectroscopic studies of steady-state and time-resolved photoluminescence indicate a significant reduction in the quantum well photoluminescent decay time in the presence of NCs, accompanied by a significant concurrent increase of the NC integrated emission, providing evidence of efficient light down-conversion mediated by FRET with efficiencies as high as ∼83 ± 6% in the green and ∼74 ± 5% in the near-IR.

KW - down-conversion

KW - InGaN/GaN

KW - lead halide perovskites

KW - nanocrystals

KW - resonant energy transfer

UR - https://www.scopus.com/pages/publications/85111228316

U2 - 10.1021/acsanm.9b02154

DO - 10.1021/acsanm.9b02154

M3 - Article

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SN - 2574-0970

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EP - 2175

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JF - ACS Applied Nano Materials

IS - 3

ER -

InGaN Nanohole Arrays Coated by Lead Halide Perovskite Nanocrystals for Solid-State Lighting

Abstract

Bibliographical note

Funding

Keywords

ASJC Scopus subject areas

Access to Document

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Manufacturing of Nano-Engineered III-N Semiconductors

Manufacturing of Nano-Engineered III-N Semiconductors - Equipment

Cite this

InGaN Nanohole Arrays Coated by Lead Halide Perovskite Nanocrystals for Solid-State Lighting

Abstract

Bibliographical note

Funding

Keywords

ASJC Scopus subject areas

Access to Document

Other files and links

Fingerprint

Projects

Manufacturing of Nano-Engineered III-N Semiconductors

Manufacturing of Nano-Engineered III-N Semiconductors - Equipment

Cite this