TY - JOUR
T1 - InGaN Nanohole Arrays Coated by Lead Halide Perovskite Nanocrystals for Solid-State Lighting
AU - Athanasiou, Modestos
AU - Papagiorgis, Paris
AU - Manoli, Andreas
AU - Bernasconi, Caterina
AU - Poyiatzis, Nicolas
AU - Coulon, Pierre Marie
AU - Shields, Philip
AU - Bodnarchuk, Maryna I.
AU - Kovalenko, Maksym V.
AU - Wang, Tao
AU - Itskos, Grigorios
N1 - Funding Information:
This work was financially supported by the Research and Innovation Foundation of Cyprus, under the “New Strategic Infrastructure Units-Young Scientists” Program (Grant Agreement No. “INFRASTRUCTURES/1216/0004″, Acronym “NANOSONICS”) and partially supported by the EPSRC, UK via Grant No. EP/M015181/1, “Manufacturing nano-engineered III-nitrides”. M.A. acknowledges financial support by the University of Cyprus via the “Advanced Postdoctoral Research Fellowships 2018-2019” Program and by the European Union’s Horizon 2020 research and innovation programme under the Marie Skłodowska-Curie Grant Agreement No. 831690
Publisher Copyright:
Copyright © 2020 American Chemical Society
PY - 2020/3/27
Y1 - 2020/3/27
N2 - In this work, we demonstrate efficient light down-conversion via FRET in InGaN/GaN multiple quantum well (MQW) nanohole arrays, coated with green-emitting CsPbBr3 and FAPbBr3 nanocrystals (NCs) and near-infrared (IR) FAPbI3 NC overlayers for solid-state lighting. Patterning the InGaN MQW into nanohole arrays allows a minimum nitride–NC separation while increasing the heterointerfacial area, thus improving simultaneously the nonradiative and radiative transfer efficiencies. Detailed spectroscopic studies of steady-state and time-resolved photoluminescence indicate a significant reduction in the quantum well photoluminescent decay time in the presence of NCs, accompanied by a significant concurrent increase of the NC integrated emission, providing evidence of efficient light down-conversion mediated by FRET with efficiencies as high as ∼83 ± 6% in the green and ∼74 ± 5% in the near-IR.
AB - In this work, we demonstrate efficient light down-conversion via FRET in InGaN/GaN multiple quantum well (MQW) nanohole arrays, coated with green-emitting CsPbBr3 and FAPbBr3 nanocrystals (NCs) and near-infrared (IR) FAPbI3 NC overlayers for solid-state lighting. Patterning the InGaN MQW into nanohole arrays allows a minimum nitride–NC separation while increasing the heterointerfacial area, thus improving simultaneously the nonradiative and radiative transfer efficiencies. Detailed spectroscopic studies of steady-state and time-resolved photoluminescence indicate a significant reduction in the quantum well photoluminescent decay time in the presence of NCs, accompanied by a significant concurrent increase of the NC integrated emission, providing evidence of efficient light down-conversion mediated by FRET with efficiencies as high as ∼83 ± 6% in the green and ∼74 ± 5% in the near-IR.
KW - down-conversion
KW - InGaN/GaN
KW - lead halide perovskites
KW - nanocrystals
KW - resonant energy transfer
UR - http://www.scopus.com/inward/record.url?scp=85111228316&partnerID=8YFLogxK
U2 - 10.1021/acsanm.9b02154
DO - 10.1021/acsanm.9b02154
M3 - Article
AN - SCOPUS:85111228316
VL - 3
SP - 2167
EP - 2175
JO - ACS Applied Nano Materials
JF - ACS Applied Nano Materials
SN - 2574-0970
IS - 3
ER -