InGaN Nanohole Arrays Coated by Lead Halide Perovskite Nanocrystals for Solid-State Lighting

Modestos Athanasiou, Paris Papagiorgis, Andreas Manoli, Caterina Bernasconi, Nicolas Poyiatzis, Pierre Marie Coulon, Philip Shields, Maryna I. Bodnarchuk, Maksym V. Kovalenko, Tao Wang, Grigorios Itskos

Research output: Contribution to journalArticlepeer-review

1 Citation (SciVal)


In this work, we demonstrate efficient light down-conversion via FRET in InGaN/GaN multiple quantum well (MQW) nanohole arrays, coated with green-emitting CsPbBr3 and FAPbBr3 nanocrystals (NCs) and near-infrared (IR) FAPbI3 NC overlayers for solid-state lighting. Patterning the InGaN MQW into nanohole arrays allows a minimum nitride–NC separation while increasing the heterointerfacial area, thus improving simultaneously the nonradiative and radiative transfer efficiencies. Detailed spectroscopic studies of steady-state and time-resolved photoluminescence indicate a significant reduction in the quantum well photoluminescent decay time in the presence of NCs, accompanied by a significant concurrent increase of the NC integrated emission, providing evidence of efficient light down-conversion mediated by FRET with efficiencies as high as ∼83 ± 6% in the green and ∼74 ± 5% in the near-IR.

Original languageEnglish
Pages (from-to)2167-2175
Number of pages9
JournalACS Applied Nano Materials
Issue number3
Early online date5 Feb 2020
Publication statusPublished - 27 Mar 2020


  • down-conversion
  • InGaN/GaN
  • lead halide perovskites
  • nanocrystals
  • resonant energy transfer

ASJC Scopus subject areas

  • Materials Science(all)


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