InGaAs quantum-dot mode-locked laser diodes

Mark G. Thompson, Alastair R. Rae, Mo Xia, Richard V. Penty, Ian H. White

Research output: Contribution to journalArticle

169 Citations (Scopus)

Abstract

This paper presents a selection of recent advances on two-section passively mode-locked InGaAs-based quantum-dot laser diodes. Pulse generation is demonstrated for repetition rates ranging from 310 MHz to 240 GHz, and with pulse durations ranging from the picosecond to the sub-400 fs regime. Mode-locking trends in these devices are discussed, and device performance improvements in terms of pulse duration, output power, and noise properties are presented. Design rules for reducing the pulse duration, increasing the output power, and improving noise performance are outlined. Implementation of tapered waveguide structures yields significant performance improvements, allowing the simultaneous achievement of ultrashort, Fourier-limited pulse generation with low amplitude noise, low timing jitter, and narrow RF linewidths.

Original languageEnglish
Article number4799148
Pages (from-to)661-672
Number of pages12
JournalIEEE Journal on Selected Topics in Quantum Electronics
Volume15
Issue number3
DOIs
Publication statusPublished - 1 May 2009

Keywords

  • Mode-locking
  • Optical pulse generation
  • Quantum dot (QD)
  • Quantum well (QW)
  • Semiconductor lasers

ASJC Scopus subject areas

  • Atomic and Molecular Physics, and Optics
  • Electrical and Electronic Engineering

Cite this

InGaAs quantum-dot mode-locked laser diodes. / Thompson, Mark G.; Rae, Alastair R.; Xia, Mo; Penty, Richard V.; White, Ian H.

In: IEEE Journal on Selected Topics in Quantum Electronics, Vol. 15, No. 3, 4799148, 01.05.2009, p. 661-672.

Research output: Contribution to journalArticle

Thompson, Mark G. ; Rae, Alastair R. ; Xia, Mo ; Penty, Richard V. ; White, Ian H. / InGaAs quantum-dot mode-locked laser diodes. In: IEEE Journal on Selected Topics in Quantum Electronics. 2009 ; Vol. 15, No. 3. pp. 661-672.
@article{ff9c9f9163e24a2bb38038e87d12411a,
title = "InGaAs quantum-dot mode-locked laser diodes",
abstract = "This paper presents a selection of recent advances on two-section passively mode-locked InGaAs-based quantum-dot laser diodes. Pulse generation is demonstrated for repetition rates ranging from 310 MHz to 240 GHz, and with pulse durations ranging from the picosecond to the sub-400 fs regime. Mode-locking trends in these devices are discussed, and device performance improvements in terms of pulse duration, output power, and noise properties are presented. Design rules for reducing the pulse duration, increasing the output power, and improving noise performance are outlined. Implementation of tapered waveguide structures yields significant performance improvements, allowing the simultaneous achievement of ultrashort, Fourier-limited pulse generation with low amplitude noise, low timing jitter, and narrow RF linewidths.",
keywords = "Mode-locking, Optical pulse generation, Quantum dot (QD), Quantum well (QW), Semiconductor lasers",
author = "Thompson, {Mark G.} and Rae, {Alastair R.} and Mo Xia and Penty, {Richard V.} and White, {Ian H.}",
year = "2009",
month = "5",
day = "1",
doi = "10.1109/JSTQE.2008.2012265",
language = "English",
volume = "15",
pages = "661--672",
journal = "IEEE Journal of Selected Topics in Quantum Electronics",
issn = "1077-260X",
publisher = "IEEE",
number = "3",

}

TY - JOUR

T1 - InGaAs quantum-dot mode-locked laser diodes

AU - Thompson, Mark G.

AU - Rae, Alastair R.

AU - Xia, Mo

AU - Penty, Richard V.

AU - White, Ian H.

PY - 2009/5/1

Y1 - 2009/5/1

N2 - This paper presents a selection of recent advances on two-section passively mode-locked InGaAs-based quantum-dot laser diodes. Pulse generation is demonstrated for repetition rates ranging from 310 MHz to 240 GHz, and with pulse durations ranging from the picosecond to the sub-400 fs regime. Mode-locking trends in these devices are discussed, and device performance improvements in terms of pulse duration, output power, and noise properties are presented. Design rules for reducing the pulse duration, increasing the output power, and improving noise performance are outlined. Implementation of tapered waveguide structures yields significant performance improvements, allowing the simultaneous achievement of ultrashort, Fourier-limited pulse generation with low amplitude noise, low timing jitter, and narrow RF linewidths.

AB - This paper presents a selection of recent advances on two-section passively mode-locked InGaAs-based quantum-dot laser diodes. Pulse generation is demonstrated for repetition rates ranging from 310 MHz to 240 GHz, and with pulse durations ranging from the picosecond to the sub-400 fs regime. Mode-locking trends in these devices are discussed, and device performance improvements in terms of pulse duration, output power, and noise properties are presented. Design rules for reducing the pulse duration, increasing the output power, and improving noise performance are outlined. Implementation of tapered waveguide structures yields significant performance improvements, allowing the simultaneous achievement of ultrashort, Fourier-limited pulse generation with low amplitude noise, low timing jitter, and narrow RF linewidths.

KW - Mode-locking

KW - Optical pulse generation

KW - Quantum dot (QD)

KW - Quantum well (QW)

KW - Semiconductor lasers

UR - http://www.scopus.com/inward/record.url?scp=67650901467&partnerID=8YFLogxK

U2 - 10.1109/JSTQE.2008.2012265

DO - 10.1109/JSTQE.2008.2012265

M3 - Article

VL - 15

SP - 661

EP - 672

JO - IEEE Journal of Selected Topics in Quantum Electronics

JF - IEEE Journal of Selected Topics in Quantum Electronics

SN - 1077-260X

IS - 3

M1 - 4799148

ER -