InGaAs quantum-dot mode-locked laser diodes

Mark G. Thompson, Alastair R. Rae, Mo Xia, Richard V. Penty, Ian H. White

Research output: Contribution to journalArticlepeer-review

207 Citations (SciVal)


This paper presents a selection of recent advances on two-section passively mode-locked InGaAs-based quantum-dot laser diodes. Pulse generation is demonstrated for repetition rates ranging from 310 MHz to 240 GHz, and with pulse durations ranging from the picosecond to the sub-400 fs regime. Mode-locking trends in these devices are discussed, and device performance improvements in terms of pulse duration, output power, and noise properties are presented. Design rules for reducing the pulse duration, increasing the output power, and improving noise performance are outlined. Implementation of tapered waveguide structures yields significant performance improvements, allowing the simultaneous achievement of ultrashort, Fourier-limited pulse generation with low amplitude noise, low timing jitter, and narrow RF linewidths.

Original languageEnglish
Article number4799148
Pages (from-to)661-672
Number of pages12
JournalIEEE Journal on Selected Topics in Quantum Electronics
Issue number3
Publication statusPublished - 1 May 2009


  • Mode-locking
  • Optical pulse generation
  • Quantum dot (QD)
  • Quantum well (QW)
  • Semiconductor lasers

ASJC Scopus subject areas

  • Atomic and Molecular Physics, and Optics
  • Electrical and Electronic Engineering


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