Abstract
The effect of cavity geometry on both pulsewidth and pulse output power is systematically investigated for a monolithic mode-locked quantum-dot laser diode. Subpicosecond pulse generation is demonstrated, and trends in pulsewidth and pulse output power are correlated to the ratio of the gain-to-absorber section lengths. A three-fold reduction in the pulsewidth, from 2.3 ps to800 fs, is observed for a change in the gain-to-absorber section length ratio of 14 : 1 to 3 : 1. In addition, an associated five-fold increase in average power and 14-fold increase in peak power are also observed.
| Original language | English |
|---|---|
| Pages (from-to) | 307-309 |
| Number of pages | 3 |
| Journal | IEEE Photonics Technology Letters |
| Volume | 21 |
| Issue number | 5 |
| DOIs | |
| Publication status | Published - 1 Mar 2009 |
Keywords
- Mode-locked lasers
- Quantum dots (QDs)
- Semiconductor lasers
ASJC Scopus subject areas
- Electrical and Electronic Engineering
- Atomic and Molecular Physics, and Optics
- Electronic, Optical and Magnetic Materials
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