InGaAs-GaAs quantum-dot mode-locked laser diodes

Optimization of the laser geometry for subpicosecond pulse generation

A. R. Rae, M. G. Thompson, A. R. Kovsh, R. V. Penty, I. H. White

Research output: Contribution to journalArticle

13 Citations (Scopus)

Abstract

The effect of cavity geometry on both pulsewidth and pulse output power is systematically investigated for a monolithic mode-locked quantum-dot laser diode. Subpicosecond pulse generation is demonstrated, and trends in pulsewidth and pulse output power are correlated to the ratio of the gain-to-absorber section lengths. A three-fold reduction in the pulsewidth, from 2.3 ps to800 fs, is observed for a change in the gain-to-absorber section length ratio of 14 : 1 to 3 : 1. In addition, an associated five-fold increase in average power and 14-fold increase in peak power are also observed.

Original languageEnglish
Pages (from-to)307-309
Number of pages3
JournalIEEE Photonics Technology Letters
Volume21
Issue number5
DOIs
Publication statusPublished - 1 Mar 2009

Keywords

  • Mode-locked lasers
  • Quantum dots (QDs)
  • Semiconductor lasers

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Atomic and Molecular Physics, and Optics
  • Electronic, Optical and Magnetic Materials

Cite this

InGaAs-GaAs quantum-dot mode-locked laser diodes : Optimization of the laser geometry for subpicosecond pulse generation. / Rae, A. R.; Thompson, M. G.; Kovsh, A. R.; Penty, R. V.; White, I. H.

In: IEEE Photonics Technology Letters, Vol. 21, No. 5, 01.03.2009, p. 307-309.

Research output: Contribution to journalArticle

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