InGaAs-GaAs quantum-dot mode-locked laser diodes: Optimization of the laser geometry for subpicosecond pulse generation

A. R. Rae; M. G. Thompson; A. R. Kovsh; R. V. Penty; I. H. White

doi:10.1109/LPT.2008.2010778

InGaAs-GaAs quantum-dot mode-locked laser diodes: Optimization of the laser geometry for subpicosecond pulse generation

A. R. Rae, M. G. Thompson, A. R. Kovsh, R. V. Penty, I. H. White

Vice Chancellor's Office

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13 Citations (SciVal)

Abstract

The effect of cavity geometry on both pulsewidth and pulse output power is systematically investigated for a monolithic mode-locked quantum-dot laser diode. Subpicosecond pulse generation is demonstrated, and trends in pulsewidth and pulse output power are correlated to the ratio of the gain-to-absorber section lengths. A three-fold reduction in the pulsewidth, from 2.3 ps to800 fs, is observed for a change in the gain-to-absorber section length ratio of 14 : 1 to 3 : 1. In addition, an associated five-fold increase in average power and 14-fold increase in peak power are also observed.

Original language	English
Pages (from-to)	307-309
Number of pages	3
Journal	IEEE Photonics Technology Letters
Volume	21
Issue number	5
DOIs	https://doi.org/10.1109/LPT.2008.2010778
Publication status	Published - 1 Mar 2009

Keywords

Mode-locked lasers
Quantum dots (QDs)
Semiconductor lasers

ASJC Scopus subject areas

Electrical and Electronic Engineering
Atomic and Molecular Physics, and Optics
Electronic, Optical and Magnetic Materials

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10.1109/LPT.2008.2010778

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title = "InGaAs-GaAs quantum-dot mode-locked laser diodes: Optimization of the laser geometry for subpicosecond pulse generation",

abstract = "The effect of cavity geometry on both pulsewidth and pulse output power is systematically investigated for a monolithic mode-locked quantum-dot laser diode. Subpicosecond pulse generation is demonstrated, and trends in pulsewidth and pulse output power are correlated to the ratio of the gain-to-absorber section lengths. A three-fold reduction in the pulsewidth, from 2.3 ps to800 fs, is observed for a change in the gain-to-absorber section length ratio of 14 : 1 to 3 : 1. In addition, an associated five-fold increase in average power and 14-fold increase in peak power are also observed.",

keywords = "Mode-locked lasers, Quantum dots (QDs), Semiconductor lasers",

author = "Rae, {A. R.} and Thompson, {M. G.} and Kovsh, {A. R.} and Penty, {R. V.} and White, {I. H.}",

year = "2009",

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T2 - Optimization of the laser geometry for subpicosecond pulse generation

AU - Rae, A. R.

AU - Thompson, M. G.

AU - Kovsh, A. R.

AU - Penty, R. V.

AU - White, I. H.

PY - 2009/3/1

Y1 - 2009/3/1

N2 - The effect of cavity geometry on both pulsewidth and pulse output power is systematically investigated for a monolithic mode-locked quantum-dot laser diode. Subpicosecond pulse generation is demonstrated, and trends in pulsewidth and pulse output power are correlated to the ratio of the gain-to-absorber section lengths. A three-fold reduction in the pulsewidth, from 2.3 ps to800 fs, is observed for a change in the gain-to-absorber section length ratio of 14 : 1 to 3 : 1. In addition, an associated five-fold increase in average power and 14-fold increase in peak power are also observed.

AB - The effect of cavity geometry on both pulsewidth and pulse output power is systematically investigated for a monolithic mode-locked quantum-dot laser diode. Subpicosecond pulse generation is demonstrated, and trends in pulsewidth and pulse output power are correlated to the ratio of the gain-to-absorber section lengths. A three-fold reduction in the pulsewidth, from 2.3 ps to800 fs, is observed for a change in the gain-to-absorber section length ratio of 14 : 1 to 3 : 1. In addition, an associated five-fold increase in average power and 14-fold increase in peak power are also observed.

KW - Mode-locked lasers

KW - Quantum dots (QDs)

KW - Semiconductor lasers

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DO - 10.1109/LPT.2008.2010778

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JO - IEEE Photonics Technology Letters

JF - IEEE Photonics Technology Letters

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ER -

InGaAs-GaAs quantum-dot mode-locked laser diodes: Optimization of the laser geometry for subpicosecond pulse generation

Abstract

Keywords

ASJC Scopus subject areas

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