Influence of Poisson's ratio uncertainty on calculations of the bowing parameter for strained InGaN layers

S Stepanov; W N Wang; B S Yavich; V Bougrov; Y T Rebane; Y G Shreter

Influence of Poisson's ratio uncertainty on calculations of the bowing parameter for strained InGaN layers

S Stepanov, W N Wang, B S Yavich, V Bougrov, Y T Rebane, Y G Shreter

Department of Electronic & Electrical Engineering

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9 Citations (SciVal)

Abstract

The composition dependence of emission energy of pseudomorphically strained InGaN layers with In content up to 0.2 is obtained. It is found that the main reason of "scatter" in published values of the InGaN bowing parameter is the uncertainty of the Poisson's ratio determination. It is shown that after recalculation to the same Poisson's ratio, most published data yield essentially the same results as compared to experimental uncertainty.

Original language	English
Pages (from-to)	1-8
Number of pages	8
Journal	MRS Internet Journal of Nitride Semiconductor Research
Volume	6
Issue number	6
Publication status	Published - 2001

Bibliographical note

ID number: ISI:000168565500001

Cite this

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title = "Influence of Poisson's ratio uncertainty on calculations of the bowing parameter for strained InGaN layers",

abstract = "The composition dependence of emission energy of pseudomorphically strained InGaN layers with In content up to 0.2 is obtained. It is found that the main reason of {"}scatter{"} in published values of the InGaN bowing parameter is the uncertainty of the Poisson's ratio determination. It is shown that after recalculation to the same Poisson's ratio, most published data yield essentially the same results as compared to experimental uncertainty.",

author = "S Stepanov and Wang, {W N} and Yavich, {B S} and V Bougrov and Rebane, {Y T} and Shreter, {Y G}",

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T1 - Influence of Poisson's ratio uncertainty on calculations of the bowing parameter for strained InGaN layers

AU - Stepanov, S

AU - Wang, W N

AU - Yavich, B S

AU - Bougrov, V

AU - Rebane, Y T

AU - Shreter, Y G

N1 - ID number: ISI:000168565500001

PY - 2001

Y1 - 2001

N2 - The composition dependence of emission energy of pseudomorphically strained InGaN layers with In content up to 0.2 is obtained. It is found that the main reason of "scatter" in published values of the InGaN bowing parameter is the uncertainty of the Poisson's ratio determination. It is shown that after recalculation to the same Poisson's ratio, most published data yield essentially the same results as compared to experimental uncertainty.

AB - The composition dependence of emission energy of pseudomorphically strained InGaN layers with In content up to 0.2 is obtained. It is found that the main reason of "scatter" in published values of the InGaN bowing parameter is the uncertainty of the Poisson's ratio determination. It is shown that after recalculation to the same Poisson's ratio, most published data yield essentially the same results as compared to experimental uncertainty.

M3 - Article

SN - 1092-5783

VL - 6

SP - 1

EP - 8

JO - MRS Internet Journal of Nitride Semiconductor Research

JF - MRS Internet Journal of Nitride Semiconductor Research

IS - 6

ER -

Influence of Poisson's ratio uncertainty on calculations of the bowing parameter for strained InGaN layers

Abstract

Bibliographical note

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