Influence of Poisson's ratio uncertainty on calculations of the bowing parameter for strained InGaN layers

S Stepanov, W N Wang, B S Yavich, V Bougrov, Y T Rebane, Y G Shreter

Research output: Contribution to journalArticlepeer-review

5 Citations (Scopus)

Abstract

The composition dependence of emission energy of pseudomorphically strained InGaN layers with In content up to 0.2 is obtained. It is found that the main reason of "scatter" in published values of the InGaN bowing parameter is the uncertainty of the Poisson's ratio determination. It is shown that after recalculation to the same Poisson's ratio, most published data yield essentially the same results as compared to experimental uncertainty.
Original languageEnglish
Pages (from-to)1-8
Number of pages8
JournalMRS Internet Journal of Nitride Semiconductor Research
Volume6
Issue number6
Publication statusPublished - 2001

Fingerprint Dive into the research topics of 'Influence of Poisson's ratio uncertainty on calculations of the bowing parameter for strained InGaN layers'. Together they form a unique fingerprint.

Cite this