Influence of localized nitrogen states on material gain in InGaAsN/GaAs quantum-well lasers

J. C.L. Yong; J. M. Rorison; I. H. White

doi:10.1063/1.1390482

Influence of localized nitrogen states on material gain in InGaAsN/GaAs quantum-well lasers

J. C.L. Yong, J. M. Rorison, I. H. White

Vice Chancellor's Office

University of Bristol

Research output: Contribution to journal › Article › peer-review

12 Citations (SciVal)

Abstract

The effect of the nature of nitrogen incorporation in the InGaAsN/GaAs quantum well system on gain is investigated. The nitrogen is considered to be either fully incorporated within the lattice or to be incorporated as a localized acceptor. In the latter case this results in conduction-band anticrossing, causing nonparabolicity. The resulting gains from the two extreme limits are compared and found to be similar. This shows that the nature of the nitrogen incorporation is not a key issue in the performance of InGaAsN/GaAs quantum well lasers for 1.3 μm applications.

Original language	English
Pages (from-to)	1085-1087
Number of pages	3
Journal	Applied Physics Letters
Volume	79
Issue number	8
DOIs	https://doi.org/10.1063/1.1390482
Publication status	Published - 20 Aug 2001

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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10.1063/1.1390482

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abstract = "The effect of the nature of nitrogen incorporation in the InGaAsN/GaAs quantum well system on gain is investigated. The nitrogen is considered to be either fully incorporated within the lattice or to be incorporated as a localized acceptor. In the latter case this results in conduction-band anticrossing, causing nonparabolicity. The resulting gains from the two extreme limits are compared and found to be similar. This shows that the nature of the nitrogen incorporation is not a key issue in the performance of InGaAsN/GaAs quantum well lasers for 1.3 μm applications.",

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AB - The effect of the nature of nitrogen incorporation in the InGaAsN/GaAs quantum well system on gain is investigated. The nitrogen is considered to be either fully incorporated within the lattice or to be incorporated as a localized acceptor. In the latter case this results in conduction-band anticrossing, causing nonparabolicity. The resulting gains from the two extreme limits are compared and found to be similar. This shows that the nature of the nitrogen incorporation is not a key issue in the performance of InGaAsN/GaAs quantum well lasers for 1.3 μm applications.

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Influence of localized nitrogen states on material gain in InGaAsN/GaAs quantum-well lasers

Abstract

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