Influence of guided mode absorption on the effectiveness of GaN-on-sapphire photonic crystal light-emitting diodes

P.A. Shields; S. Lis; T. Lee; D.W.E. Allsopp; M.D.B. Charlton; M.E. Zoorob; W.N. Wang

Influence of guided mode absorption on the effectiveness of GaN-on-sapphire photonic crystal light-emitting diodes

P.A. Shields
, S. Lis
, T. Lee
, D.W.E. Allsopp
, M.D.B. Charlton
, M.E. Zoorob
, W.N. Wang

Department of Electronic & Electrical Engineering

Research output: Contribution to conference › Other

233 Downloads (Pure)

Abstract

Enhanced light extraction from photonic crystal light-emitting diodes etched into the device surface is described. Finite difference time domain modeling indicates that scattering or absorption at the substrate-epilayer interface is the dominant limiting process.

Original language	English
Pages	1-2
Number of pages	2
Publication status	Published - 2 Jun 2009
Event	Conference on Lasers and Electro-Optics, 2009 and 2009 Conference on Quantum electronics and Laser Science Conference - Baltimore, M.D., USA United States Duration: 2 Jun 2009 → 3 Jun 2009

Conference

Conference	Conference on Lasers and Electro-Optics, 2009 and 2009 Conference on Quantum electronics and Laser Science Conference
Abbreviated title	CLEO/QELS 2009.
Country/Territory	USA United States
City	Baltimore, M.D.
Period	2/06/09 → 3/06/09

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Influence of Guided Mode Absorption on the Effectiveness of GaN-on-Sapphire Photonic Crystal Light-emitting Diodes
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Accepted author manuscript, 118 KB

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Shields, P. A., Lis, S., Lee, T., Allsopp, D. W. E., Charlton, M. D. B., Zoorob, M. E., & Wang, W. N. (2009). Influence of guided mode absorption on the effectiveness of GaN-on-sapphire photonic crystal light-emitting diodes. 1-2. Conference on Lasers and Electro-Optics, 2009 and 2009 Conference on Quantum electronics and Laser Science Conference, Baltimore, M.D., USA United States.

Influence of guided mode absorption on the effectiveness of GaN-on-sapphire photonic crystal light-emitting diodes. / Shields, P.A.; Lis, S.; Lee, T. et al.
2009. 1-2 Conference on Lasers and Electro-Optics, 2009 and 2009 Conference on Quantum electronics and Laser Science Conference, Baltimore, M.D., USA United States.

Research output: Contribution to conference › Other

Shields, PA, Lis, S, Lee, T, Allsopp, DWE, Charlton, MDB, Zoorob, ME & Wang, WN 2009, 'Influence of guided mode absorption on the effectiveness of GaN-on-sapphire photonic crystal light-emitting diodes', Conference on Lasers and Electro-Optics, 2009 and 2009 Conference on Quantum electronics and Laser Science Conference, Baltimore, M.D., USA United States, 2/06/09 - 3/06/09 pp. 1-2.

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title = "Influence of guided mode absorption on the effectiveness of GaN-on-sapphire photonic crystal light-emitting diodes",

abstract = "Enhanced light extraction from photonic crystal light-emitting diodes etched into the device surface is described. Finite difference time domain modeling indicates that scattering or absorption at the substrate-epilayer interface is the dominant limiting process.",

author = "P.A. Shields and S. Lis and T. Lee and D.W.E. Allsopp and M.D.B. Charlton and M.E. Zoorob and W.N. Wang",

year = "2009",

month = jun,

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language = "English",

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T1 - Influence of guided mode absorption on the effectiveness of GaN-on-sapphire photonic crystal light-emitting diodes

AU - Shields, P.A.

AU - Lis, S.

AU - Lee, T.

AU - Allsopp, D.W.E.

AU - Charlton, M.D.B.

AU - Zoorob, M.E.

AU - Wang, W.N.

PY - 2009/6/2

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N2 - Enhanced light extraction from photonic crystal light-emitting diodes etched into the device surface is described. Finite difference time domain modeling indicates that scattering or absorption at the substrate-epilayer interface is the dominant limiting process.

AB - Enhanced light extraction from photonic crystal light-emitting diodes etched into the device surface is described. Finite difference time domain modeling indicates that scattering or absorption at the substrate-epilayer interface is the dominant limiting process.

M3 - Other

SP - 1

EP - 2

T2 - Conference on Lasers and Electro-Optics, 2009 and 2009 Conference on Quantum electronics and Laser Science Conference

Y2 - 2 June 2009 through 3 June 2009

ER -

Influence of guided mode absorption on the effectiveness of GaN-on-sapphire photonic crystal light-emitting diodes

Abstract

Conference

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David Bullett Nanofabrication Facility

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