Influence of guided mode absorption on the effectiveness of GaN-on-sapphire photonic crystal light-emitting diodes

P.A. Shields, S. Lis, T. Lee, D.W.E. Allsopp, M.D.B. Charlton, M.E. Zoorob, W.N. Wang

Research output: Contribution to conferenceOther

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Abstract

Enhanced light extraction from photonic crystal light-emitting diodes etched into the device surface is described. Finite difference time domain modeling indicates that scattering or absorption at the substrate-epilayer interface is the dominant limiting process.
Original languageEnglish
Pages1-2
Number of pages2
Publication statusPublished - 2 Jun 2009
EventConference on Lasers and Electro-Optics, 2009 and 2009 Conference on Quantum electronics and Laser Science Conference - Baltimore, M.D., USA United States
Duration: 2 Jun 20093 Jun 2009

Conference

ConferenceConference on Lasers and Electro-Optics, 2009 and 2009 Conference on Quantum electronics and Laser Science Conference
Abbreviated title CLEO/QELS 2009.
CountryUSA United States
CityBaltimore, M.D.
Period2/06/093/06/09

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